All MOSFET. SSD60N04-12D Datasheet

 

SSD60N04-12D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSD60N04-12D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 53 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 4 nC
   trⓘ - Rise Time: 5 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO252

 SSD60N04-12D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSD60N04-12D Datasheet (PDF)

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 ssd60n04-12d.pdf

SSD60N04-12D SSD60N04-12D

SSD60N04-12D N-Ch Enhancement Mode Power MOSFET 53A, 40V, RDS(ON) 12m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack)process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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