SSD60N04-12D Specs and Replacement
Type Designator: SSD60N04-12D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 53 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO252
SSD60N04-12D substitution
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SSD60N04-12D datasheet
ssd60n04-12d.pdf
SSD60N04-12D N-Ch Enhancement Mode Power MOSFET 53A, 40V, RDS(ON) 12m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack) process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC... See More ⇒
Detailed specifications: SSD40N03, SSD40N04-20D, SSD40N10-30D, SSD40P04-20D, SSD40P04-20DE, SSD45N03, SSD50N06-15D, SSD50P03-09D, IRLB3034, SSD70N03-04D, SSD70N04-06D, SSD9435, SSD9575, SSD95N03, SSD9971, SSD9973, SSDF9504
Keywords - SSD60N04-12D MOSFET specs
SSD60N04-12D cross reference
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History: AP6923GMT
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