All MOSFET. SSD95N03 Datasheet

 

SSD95N03 Datasheet and Replacement


   Type Designator: SSD95N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 96 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO252
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SSD95N03 Datasheet (PDF)

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SSD95N03

SSD95N03 96A , 30V , RDS(ON) 4m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION TO-252(D-Pack) The SSD95N03 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter a

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SSD95N03

SSD9575-15A, -60V,RDS(ON)90m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionTO-252The SSD9575 provide the designer with the best combination of fast switching, ruggerized device device design, low on-resistance and cost -effectiveness.The TO-252 is universally preferred for all commercial-industrial surface mount applic

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STH26N25FI | BRCS200P03DP | IRFB3004GPBF | CHM50N06PAGP | CRTE120N06L | LKK47-06C5 | TSM4424CS

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