All MOSFET. SSE70N10-44P Datasheet

 

SSE70N10-44P MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSE70N10-44P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 30 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: TO220

 SSE70N10-44P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSE70N10-44P Datasheet (PDF)

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 sse70n10-44p.pdf

SSE70N10-44P SSE70N10-44P

SSE70N10-44P 70A , 100V , RDS(ON) 44m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a Dhigh cell density trench process to provide low RDS(on) Cand to ensure minimal power loss and heat dissipation.

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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