All MOSFET. SSF1331P Datasheet

 

SSF1331P MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSF1331P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.2 nC
   trⓘ - Rise Time: 9 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.112 Ohm
   Package: SOT323

 SSF1331P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSF1331P Datasheet (PDF)

 ..1. Size:393K  secos
ssf1331p.pdf

SSF1331P
SSF1331P

SSF1331P -1.5A, -30V, RDS(on) 0.112 P-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a SOT-323high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters

 9.1. Size:448K  secos
ssf1321p.pdf

SSF1331P
SSF1331P

SSF1321P -1.7A, -20V, RDS(on) 0.079 P-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low SOT-323RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters

 9.2. Size:393K  secos
ssf1320n.pdf

SSF1331P
SSF1331P

SSF1320N 2A , 20V , RDS(ON) 58 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SOT-323 These miniature surface mount MOSFETs Autilize a high cell density trench process to provide low L3RDS(ON) and to ensure minimal power loss and heat dissipation.

 9.3. Size:510K  silikron
ssf13n50.pdf

SSF1331P
SSF1331P

SSF13N50 Main Product Characteristics VDSS 500V RDS(on) 0.39(typ.) ID 13A Marking and Pin TO-220 Schematic Diagram Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 o

 9.4. Size:533K  silikron
ssf13n50f.pdf

SSF1331P
SSF1331P

SSF13N50F Main Product Characteristics: VDSS 500V RDS(on) 0.41(typ.) ID 13A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.5. Size:369K  silikron
ssf1341.pdf

SSF1331P
SSF1331P

SSF1341DDESCRIPTION The SSF1341 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable Gfor use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -12V,ID = -3.5A RDS(ON)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SSF2301B | BLF245B | 2SK2129

 

 
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