All MOSFET. SSF1331P Datasheet

 

SSF1331P Datasheet and Replacement


   Type Designator: SSF1331P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.112 Ohm
   Package: SOT323
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SSF1331P Datasheet (PDF)

 ..1. Size:393K  secos
ssf1331p.pdf pdf_icon

SSF1331P

SSF1331P -1.5A, -30V, RDS(on) 0.112 P-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a SOT-323high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters

 9.1. Size:448K  secos
ssf1321p.pdf pdf_icon

SSF1331P

SSF1321P -1.7A, -20V, RDS(on) 0.079 P-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low SOT-323RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters

 9.2. Size:393K  secos
ssf1320n.pdf pdf_icon

SSF1331P

SSF1320N 2A , 20V , RDS(ON) 58 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SOT-323 These miniature surface mount MOSFETs Autilize a high cell density trench process to provide low L3RDS(ON) and to ensure minimal power loss and heat dissipation.

 9.3. Size:510K  silikron
ssf13n50.pdf pdf_icon

SSF1331P

SSF13N50 Main Product Characteristics VDSS 500V RDS(on) 0.39(typ.) ID 13A Marking and Pin TO-220 Schematic Diagram Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 o

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History: CJ3434 | NP180N04TUJ | SRT10N160LD | SM4186T9RL | NCE30P12BS | APT10021JFLL | SSW65R190S2

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