SSG4463P
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSG4463P
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7
V
|Id|ⓘ - Maximum Drain Current: 13.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 33.4
nC
trⓘ - Rise Time: 23
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0115
Ohm
Package:
SOP8
SSG4463P
Datasheet (PDF)
..1. Size:620K secos
ssg4463p.pdf 
SSG4463P P-Ch Enhancement Mode Power MOSFET -13.4A, -20V, RDS(ON) 11.5 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs Butilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in L Dp
8.1. Size:142K secos
ssg4462n.pdf
SSG4462N 9.7 A, 60 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar
9.1. Size:168K secos
ssg4499p.pdf
SSG4499P -6.8 A, -60 V, RDS(ON) 45 mP-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. L DMFEATURES
9.2. Size:619K secos
ssg4480n.pdf
SSG4480N 7.1 A, 80 V, RDS(ON) 41 mN-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 FEATURES Low RDS(on) trench technology. B Low thermal impedance. Fast switching speed. L DAPPLICATIONS M White LED boost converters A C Automotive Systems N I
9.3. Size:657K secos
ssg4435.pdf
SSG4435 -8A, -30V, RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4435 provide the designer with the best B combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universal
9.4. Size:441K secos
ssg4410n.pdf
SSG4410N 13 A, 30 V, RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power L Dmanagement in portable and battery-pow
9.5. Size:542K secos
ssg4407p.pdf
SSG4407P -15A, -30V, RDS(ON) 9 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures Bminimal power loss and conserves energy, making this device ideal for use
9.6. Size:822K secos
ssg4470stm.pdf
SSG4470STM N-Ch Enhancement Mode Power MOSFET 10 A, 40 V, RDS(ON) 10 m Elektronische Bauelemente FEATURES Super high dense cell design for low RDS(on). SOP-8 Rugged and reliable. Surface Mount Package. BPRODUCT SUMMARY PRODUCT SUMMARY L DVDSS(V) d RDS(on) m(Max ID(A)10@VGS= 10V M40 10 13@VGS= 4.5V A CNKJMARKING H G F EMillime
9.7. Size:475K secos
ssg4434n.pdf
SSG4434N 18.6 A, 30 V, RDS(ON) 7 mN-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered L
9.8. Size:142K secos
ssg4492n.pdf
SSG4492N 9A, 100V, RDS(ON) 26m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs Butilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. L DMFEATURES L
9.9. Size:596K secos
ssg4402n.pdf
SSG4402N 6.7 A, 60 V, RDS(ON) 38 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar
9.10. Size:144K secos
ssg4490n.pdf
SSG4490N 5.2 A, 100 V, RDS(ON) 78 mN-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal Bpower loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered
9.11. Size:613K secos
ssg4436n.pdf
SSG4436N 22A, 30V, RDS(ON) 4.6mN-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. L DFEATURES M
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