SSG4463P - описание и поиск аналогов

SSG4463P P-Ch Enhancement Mode Power MOSFET -13.4A, -20V, RDS(ON) 11.5 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs B utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in L D p

SSG4462N 9.7 A, 60 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar

SSG4499P -6.8 A, -60 V, RDS(ON) 45 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to B provide low RDS(on) and to ensure minimal power loss and heat dissipation. L D M FEATURES

SSG4480N 7.1 A, 80 V, RDS(ON) 41 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 FEATURES Low RDS(on) trench technology. B Low thermal impedance. Fast switching speed. L D APPLICATIONS M White LED boost converters A C Automotive Systems N I

SSG4435 -8A, -30V, RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4435 provide the designer with the best B combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universal

SSG4410N 13 A, 30 V, RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to B provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power L D management in portable and battery-pow

SSG4407P -15A, -30V, RDS(ON) 9 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures B minimal power loss and conserves energy, making this device ideal for use

SSG4470STM N-Ch Enhancement Mode Power MOSFET 10 A, 40 V, RDS(ON) 10 m Elektronische Bauelemente FEATURES Super high dense cell design for low RDS(on). SOP-8 Rugged and reliable. Surface Mount Package. B PRODUCT SUMMARY PRODUCT SUMMARY L D VDSS(V) d RDS(on) m( Max ID(A) 10@VGS= 10V M 40 10 13@VGS= 4.5V A C N K J MARKING H G F E Millime

SSG4434N 18.6 A, 30 V, RDS(ON) 7 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to B provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered L

SSG4492N 9A, 100V, RDS(ON) 26m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. L D M FEATURES L

SSG4402N 6.7 A, 60 V, RDS(ON) 38 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar

SSG4490N 5.2 A, 100 V, RDS(ON) 78 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal B power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered