All MOSFET. SSG4502CE Datasheet

 

SSG4502CE MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSG4502CE
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9(16) nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: SOP8

 SSG4502CE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSG4502CE Datasheet (PDF)

 ..1. Size:3228K  secos
 ssg4502ce.pdf

SSG4502CE SSG4502CE

SSG4502CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m Elektronische Bauelemente P-Ch: -8.5A, -30 V, RDS(ON) 23 m RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize a Bhigh cell density trench process to provide low RDS(on)

 6.1. Size:1023K  secos
 ssg4502c.pdf

SSG4502CE SSG4502CE

SSG4502C N-Ch: 10 A, 30 V, RDS(ON) 16 mP-Ch: -8.5 A, -30 V, RDS(ON) 23 mElektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power lo

 8.1. Size:1192K  secos
 ssg4503.pdf

SSG4502CE SSG4502CE

SSG4503N Channel 6.9A, 30V,RDS(ON) 28m P Channel -6.3A, -30V,RDS(ON) 36m Elektronische Bauelemente Enhancement Mode Power Mos.FETRoHS Compliant ProductSOP-8Description0.190.250.400.90o0.375 REFThe SSG4503 provide the designer with the best combination of fast switching, 6.205.800.25ruggedized device design, low on-resistance and cost-effectiveness.

 8.2. Size:979K  secos
 ssg4505.pdf

SSG4502CE SSG4502CE

SSG4505N Channel 10A, 30V,RDS(ON) 14m P Channel -8.4A, -30V,RDS(ON) 20m Elektronische Bauelemente Enhancement Mode Power Mos.FETRoHS Compliant ProductSOP-8Description0.190.250.400.90o0.375 REFThe SSG4505 provide the designer with the best combination of fast switching, 6.205.800.25ruggedized device design, low on-resistance and cost-effectiveness. 3.

 8.3. Size:876K  secos
 ssg4501.pdf

SSG4502CE SSG4502CE

SSG4501N Channel 7A, 30V,RDS(ON) 28m P Channel -5.3A, -30V,RDS(ON) 50m Elektronische Bauelemente Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8Description0.190.250.400.90o0.375 REFThe SSG4501 provide the designer with the best combination of fast switching, 6.205.800.25rugged

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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