All MOSFET. SSG4542C Datasheet

 

SSG4542C Datasheet and Replacement


   Type Designator: SSG4542C
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9(16) nS
   Cossⓘ - Output Capacitance: 272(278) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: SOP8
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SSG4542C Datasheet (PDF)

 ..1. Size:935K  secos
ssg4542c.pdf pdf_icon

SSG4542C

SSG4542C N-Ch: 8.3 A, 40 V, RDS(ON) 14 mP-Ch: -7.6 A, -40 V, RDS(ON) 28 mElektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal powe

 8.1. Size:1088K  secos
ssg4543c.pdf pdf_icon

SSG4542C

SSG4543C N-Ch: 6.5 A, 40 V, RDS(ON) 32 mP-Ch: -7.6 A, -40 V, RDS(ON) 30 mElektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal powe

 9.1. Size:1192K  secos
ssg4503.pdf pdf_icon

SSG4542C

SSG4503N Channel 6.9A, 30V,RDS(ON) 28m P Channel -6.3A, -30V,RDS(ON) 36m Elektronische Bauelemente Enhancement Mode Power Mos.FETRoHS Compliant ProductSOP-8Description0.190.250.400.90o0.375 REFThe SSG4503 provide the designer with the best combination of fast switching, 6.205.800.25ruggedized device design, low on-resistance and cost-effectiveness.

 9.2. Size:3292K  secos
ssg4512ce.pdf pdf_icon

SSG4542C

SSG4512CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m Elektronische Bauelemente P-Ch: -5.2 A, -30 V, RDS(ON) 52 m RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize a Bhigh cell density trench process to provide low RDS(on)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: CEF02N6A | STP2N60FI | PE609CA | IXTP16N50PM | 2SK566 | STE180N05 | DMN3730U

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