All MOSFET. SSG6612N Datasheet

 

SSG6612N MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSG6612N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 9.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SOP8

 SSG6612N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSG6612N Datasheet (PDF)

 ..1. Size:567K  secos
 ssg6612n.pdf

SSG6612N SSG6612N

SSG6612N 9.4 A, 30 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar

 9.1. Size:415K  secos
 ssg6680.pdf

SSG6612N SSG6612N

SSG668011.5A, 30V,RDS(ON) 11m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductSOP-8Description0.190.250.400.90oThe SSG6680 provide the designer with the best combination of fast switching, 0.375 REF6.20ruggedized device design, low on-resistance and cost-effectiveness. 5.800.25The SOP-8 is universally preferred for al

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRFS5620 | BSC025N03LS | BSC035N04LSG | SDF054JAB-U | 2N7063 | STP3N100XI | SDF20N60JEB

 

 
Back to Top