All MOSFET. SSG6612N Datasheet

 

SSG6612N Datasheet and Replacement


   Type Designator: SSG6612N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 9.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 4 nC
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SOP8
 

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SSG6612N Datasheet (PDF)

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SSG6612N

SSG6612N 9.4 A, 30 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar

 9.1. Size:415K  secos
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SSG6612N

SSG668011.5A, 30V,RDS(ON) 11m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductSOP-8Description0.190.250.400.90oThe SSG6680 provide the designer with the best combination of fast switching, 0.375 REF6.20ruggedized device design, low on-resistance and cost-effectiveness. 5.800.25The SOP-8 is universally preferred for al

Datasheet: SSG4935P , SSG4940N , SSG4940NC , SSG4942N , SSG4953 , SSG4953P , SSG4990N , SSG5509A , RFP50N06 , SSG6680 , SSG9435 , SSG9435BDY , SSG9435P , SSG9475 , SSG9575 , SSK3018K , SSM0410 .

History: DMN3007LSS

Keywords - SSG6612N MOSFET datasheet

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