SSP7442N
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSP7442N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4
nC
trⓘ - Rise Time: 5
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009
Ohm
Package: SOP8PP
SSP7442N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSP7442N
Datasheet (PDF)
..1. Size:162K secos
ssp7442n.pdf 
SSP7442N 20 A, 40 V, RDS(ON) 9 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
8.1. Size:162K secos
ssp7440n.pdf
SSP7440N 15 A, 40 V, RDS(ON) 15 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
9.1. Size:162K secos
ssp7464n.pdf
SSP7464N 6.4 A, 60 V, RDS(ON) 82 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-D
9.2. Size:162K secos
ssp7460n.pdf
SSP7460N 12 A, 60 V, RDS(ON) 26 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
9.3. Size:143K secos
ssp7438n.pdf
SSP7438N 22 A, 30 V, RDS(ON) 7.5 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PP DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) pr
9.4. Size:162K secos
ssp7411p.pdf
SSP7411P -6 A, -100 V, RDS(ON) 95 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-
9.5. Size:162K secos
ssp7434n.pdf
SSP7434N 27 A, 30 V, RDS(ON) 4.9 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-D
9.6. Size:162K secos
ssp7432n.pdf
SSP7432N 27 A, 30 V, RDS(ON) 4.9 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-D
9.7. Size:558K secos
ssp7431p.pdf
SSP7431P -17A, -30V, RDS(ON) 13 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8PP These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) pro
9.8. Size:162K secos
ssp7461p.pdf
SSP7461P -10 A, -60 V, RDS(ON) 45 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-
9.9. Size:162K secos
ssp7421p.pdf
SSP7421P -20 A, -20 V, RDS(ON) 8.4 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC
9.10. Size:162K secos
ssp7481p.pdf
SSP7481P -6.7 A, -80 V, RDS(ON) 75 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC
9.11. Size:162K secos
ssp7430n.pdf
SSP7430N 17 A, 30 V, RDS(ON) 13 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
9.12. Size:162K secos
ssp7462n.pdf
SSP7462N 13 A, 60 V, RDS(ON) 22 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
9.13. Size:162K secos
ssp7480n.pdf
SSP7480N 12 A, 80 V, RDS(ON) 26 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
9.14. Size:162K secos
ssp7436n.pdf
SSP7436N 24 A, 30 V, RDS(ON) 4.6 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-D
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