SSP7442N. Аналоги и основные параметры
Наименование производителя: SSP7442N
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 5 ns
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
Тип корпуса: SOP8PP
Аналог (замена) для SSP7442N
- подборⓘ MOSFET транзистора по параметрам
SSP7442N даташит
..1. Size:162K secos
ssp7442n.pdf 
SSP7442N 20 A, 40 V, RDS(ON) 9 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PP DESCRIPTION B These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
8.1. Size:162K secos
ssp7440n.pdf 
SSP7440N 15 A, 40 V, RDS(ON) 15 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PP DESCRIPTION B These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
9.1. Size:162K secos
ssp7464n.pdf 
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9.2. Size:162K secos
ssp7460n.pdf 
SSP7460N 12 A, 60 V, RDS(ON) 26 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PP DESCRIPTION B These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
9.3. Size:143K secos
ssp7438n.pdf 
SSP7438N 22 A, 30 V, RDS(ON) 7.5 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PP DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) pr
9.4. Size:162K secos
ssp7411p.pdf 
SSP7411P -6 A, -100 V, RDS(ON) 95 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PP DESCRIPTION B These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-
9.5. Size:162K secos
ssp7434n.pdf 
SSP7434N 27 A, 30 V, RDS(ON) 4.9 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PP DESCRIPTION B These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-D
9.6. Size:162K secos
ssp7432n.pdf 
SSP7432N 27 A, 30 V, RDS(ON) 4.9 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PP DESCRIPTION B These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-D
9.7. Size:558K secos
ssp7431p.pdf 
SSP7431P -17A, -30V, RDS(ON) 13 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8PP These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) pro
9.8. Size:162K secos
ssp7461p.pdf 
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9.9. Size:162K secos
ssp7421p.pdf 
SSP7421P -20 A, -20 V, RDS(ON) 8.4 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PP DESCRIPTION B These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC
9.10. Size:162K secos
ssp7481p.pdf 
SSP7481P -6.7 A, -80 V, RDS(ON) 75 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PP DESCRIPTION B These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC
9.11. Size:162K secos
ssp7430n.pdf 
SSP7430N 17 A, 30 V, RDS(ON) 13 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PP DESCRIPTION B These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
9.12. Size:162K secos
ssp7462n.pdf 
SSP7462N 13 A, 60 V, RDS(ON) 22 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PP DESCRIPTION B These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
9.13. Size:162K secos
ssp7480n.pdf 
SSP7480N 12 A, 80 V, RDS(ON) 26 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PP DESCRIPTION B These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
9.14. Size:162K secos
ssp7436n.pdf 
SSP7436N 24 A, 30 V, RDS(ON) 4.6 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PP DESCRIPTION B These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-D
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