All MOSFET. SSP7461P Datasheet

 

SSP7461P Datasheet and Replacement


   Type Designator: SSP7461P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOP8PP
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SSP7461P Datasheet (PDF)

 ..1. Size:162K  secos
ssp7461p.pdf pdf_icon

SSP7461P

SSP7461P -10 A, -60 V, RDS(ON) 45 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-

 8.1. Size:162K  secos
ssp7464n.pdf pdf_icon

SSP7461P

SSP7464N 6.4 A, 60 V, RDS(ON) 82 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-D

 8.2. Size:162K  secos
ssp7460n.pdf pdf_icon

SSP7461P

SSP7460N 12 A, 60 V, RDS(ON) 26 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC

 8.3. Size:162K  secos
ssp7462n.pdf pdf_icon

SSP7461P

SSP7462N 13 A, 60 V, RDS(ON) 22 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NTD5802N | BRCS200P03DP | IRFB3004GPBF | HMS90N04D | IXFR200N10P | LKK47-06C5 | TSM4424CS

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