All MOSFET. SSRF4N60 Datasheet

 

SSRF4N60 Datasheet and Replacement


   Type Designator: SSRF4N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: ITO220
 

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SSRF4N60 Datasheet (PDF)

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SSRF4N60

SSRF4N60 4A , 600 V , RDS(ON) 2.4 N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION ITO-220 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without B Ndegrading performance over time. This

Datasheet: SSPS7330N , SSPS7331P , SSPS7332N , SSPS7333P , SSPS7334N , SSQ5N50 , SSQ6N60 , SSRF30N20-400 , IRF540N , SSRF50P04-16 , SSRF60N10 , SSRF90N06 , SSRF90N06-10 , SST2604 , SST2605 , SSPS922NE , SSPS924NE .

History: DMN62D0LFB

Keywords - SSRF4N60 MOSFET datasheet

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