SSRF4N60 Datasheet. Specs and Replacement

Type Designator: SSRF4N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 66 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: ITO220

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SSRF4N60 datasheet

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SSRF4N60

SSRF4N60 4A , 600 V , RDS(ON) 2.4 N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION ITO-220 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without B N degrading performance over time. This ... See More ⇒

Detailed specifications: SSPS7330N, SSPS7331P, SSPS7332N, SSPS7333P, SSPS7334N, SSQ5N50, SSQ6N60, SSRF30N20-400, IRF540N, SSRF50P04-16, SSRF60N10, SSRF90N06, SSRF90N06-10, SST2604, SST2605, SSPS922NE, SSPS924NE

Keywords - SSRF4N60 MOSFET specs

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