All MOSFET. SSRF90N06-10 Datasheet

 

SSRF90N06-10 Datasheet and Replacement


   Type Designator: SSRF90N06-10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0099 Ohm
   Package: ITO220
 

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SSRF90N06-10 Datasheet (PDF)

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SSRF90N06-10

SSRF90N06-10 90A, 60V, RDS(ON) 9.9m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench ITO-220process to provide Low RDS(on) and to ensure minimal power loss and heat B Ndissipation. Typical applications are DC-DC

 5.1. Size:321K  secos
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SSRF90N06-10

SSRF90N06 N-Ch Enhancement Mode Power MOSFET 87A, 60V, RDS(ON) 26.5m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench ITO-220process to provide Low RDS(on) and to ensure minimal power loss and heat B Ndissipation. Typical applications are DC-DC c

Datasheet: SSPS7334N , SSQ5N50 , SSQ6N60 , SSRF30N20-400 , SSRF4N60 , SSRF50P04-16 , SSRF60N10 , SSRF90N06 , IRF640 , SST2604 , SST2605 , SSPS922NE , SSPS924NE , SSU50N10 , STT2604 , STT2605 , STT3402N .

History: LSF65R180HT | 2N65G-T6C-K | RF1S640

Keywords - SSRF90N06-10 MOSFET datasheet

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