All MOSFET. SSRF90N06-10 Datasheet

 

SSRF90N06-10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSRF90N06-10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 49 nC
   trⓘ - Rise Time: 10 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0099 Ohm
   Package: ITO220

 SSRF90N06-10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSRF90N06-10 Datasheet (PDF)

 ..1. Size:138K  secos
 ssrf90n06-10.pdf

SSRF90N06-10 SSRF90N06-10

SSRF90N06-10 90A, 60V, RDS(ON) 9.9m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench ITO-220process to provide Low RDS(on) and to ensure minimal power loss and heat B Ndissipation. Typical applications are DC-DC

 5.1. Size:321K  secos
 ssrf90n06.pdf

SSRF90N06-10 SSRF90N06-10

SSRF90N06 N-Ch Enhancement Mode Power MOSFET 87A, 60V, RDS(ON) 26.5m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench ITO-220process to provide Low RDS(on) and to ensure minimal power loss and heat B Ndissipation. Typical applications are DC-DC c

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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