SSPS924NE Datasheet. Specs and Replacement

Type Designator: SSPS924NE  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 9.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: DFN3X38PP

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SSPS924NE datasheet

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SSPS924NE

SSPS924NE 9.2A , 20V , RDS(ON) 12 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DFN3x3-8PP DESCRIPTION These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.... See More ⇒

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SSPS924NE

SSPS922NE 8.2 A , 20 V , RDS(ON) 17.5 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION DFN3x3-8PP These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation... See More ⇒

Detailed specifications: SSRF4N60, SSRF50P04-16, SSRF60N10, SSRF90N06, SSRF90N06-10, SST2604, SST2605, SSPS922NE, IRFB4110, SSU50N10, STT2604, STT2605, STT3402N, STT3405P, STT3423P, STT3434N, STT3457P

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