STT2604 Datasheet. Specs and Replacement

Type Designator: STT2604  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: TSOP6

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STT2604 datasheet

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STT2604

STT2604 5.5A, 30V,RDS(ON) 45m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2604 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The STT2604 is universally used for all commercial-industrial applications. Features * Lower Gate Ch... See More ⇒

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STT2604

STT2605 -4.0A, -30V,RDS(ON) 80m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2605 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The STT2605 is universally used for all commercial-industrial applications. Features * Fast Switch... See More ⇒

Detailed specifications: SSRF60N10, SSRF90N06, SSRF90N06-10, SST2604, SST2605, SSPS922NE, SSPS924NE, SSU50N10, IRFP260N, STT2605, STT3402N, STT3405P, STT3423P, STT3434N, STT3457P, STT3458N, STT3463P

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