STT3471P Specs and Replacement
Type Designator: STT3471P
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TSOP6
- MOSFET ⓘ Cross-Reference Search
STT3471P datasheet
..1. Size:164K secos
stt3471p.pdf 
STT3471P -2A, -100V, RDS(ON) 350 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a high cell density trench process to provide Low RDS(on) E L and to ensure minimal power loss and heat dissipation. 6 5 4 FEATURES... See More ⇒
8.1. Size:183K secos
stt3470n.pdf
STT3470N 2.2 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a High Cell Density trench process to provide Low RDS(on) E L and to ensure minimal power loss and heat dissipation. 6 5 4 Typ... See More ⇒
9.1. Size:184K secos
stt3434n.pdf
STT3434N 6 A, 30 V, RDS(ON) 32 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a high cell density trench process to provide Low RDS(on) E L and to ensure minimal power loss and heat dissipation. 6 5 4 Typical ... See More ⇒
9.2. Size:631K secos
stt3490n.pdf
STT3490N N-Channel Enhancement Mode Mos.FET 1.2 A, 150 V, RDS(ON) 700 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free KEY FEATURES TSOP-6 Low RDS(on) trench technology. A E Low thermal impedance. L Fast switching speed. 6 5 4 TYPICAL APPLICATIONS B White LED boost converters. Automotive S... See More ⇒
9.3. Size:577K secos
stt3458n.pdf
STT3458N 3.4A , 60V , RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A High Cell Density process. Low RDS(on) assures minimal E L power loss and conserves energy, making this device 6 5 4 ideal for use... See More ⇒
9.4. Size:571K secos
stt3405p.pdf
STT3405P -4.9 A, -20 V, RDS(ON) 56 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a high cell density process. Low RDS(on) assures minimal E L power loss and conserves energy, making this device 6 5 4 ideal fo... See More ⇒
9.5. Size:461K secos
stt3402n.pdf
STT3402N 6.3 A, 30 V, RDS(ON) 27 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize High Cell Density A E process. Low RDS(on) assures minimal power loss and conserves energy, L making this device ideal for use in powe... See More ⇒
9.6. Size:684K secos
stt3457p.pdf
STT3457P -4 A, -30 V, RDS(ON) 60 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a high cell density trench process to provide Low RDS(on) E L and to ensure minimal power loss and heat dissipation. 6 5 4 Typica... See More ⇒
9.7. Size:495K secos
stt3423p.pdf
STT3423P -5.7 A, -20 V, RDS(ON) 42 m P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high cell density A trench process to provide low RDS(on) and to ensure minimal power E L loss and heat dissipation. Typical applica... See More ⇒
9.8. Size:164K secos
stt3463p.pdf
STT3463P -3 A, -60 V, RDS(ON) 155 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a high cell density process. Low RDS(on) assures minimal E L power loss and conserves energy, making this device 6 5 4 ideal ... See More ⇒
9.9. Size:132K samhop
stt3418.pdf
Green Product STT3418 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 39 @ VGS=10V 30V 5A Surface Mount Package. 63 @ VGS=4.5V D D G G D S STT SERIES S SOT-223 ABSOLUTE MAXIMUM RATINGS (TA=25 C ... See More ⇒
9.10. Size:118K samhop
stt3414.pdf
Gre r r P Pr Pr Pro STT3414 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 33 @ VGS=10V Surface Mount Package. 30V 7A 42 @ VGS=4.5V 57 @ VGS=2.5V D D D G G G D D S S STT SERIES S SOT-223 (... See More ⇒
Detailed specifications: STT3402N, STT3405P, STT3423P, STT3434N, STT3457P, STT3458N, STT3463P, STT3470N, 7N65, STT3490N, STT3520C, STT3585, STT3599C, STT3810N, STT3922N, STT3962N, STT3962NE
Keywords - STT3471P MOSFET specs
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