STT3599C
MOSFET. Datasheet pdf. Equivalent
Type Designator: STT3599C
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.15
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 3.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8
nC
trⓘ - Rise Time: 12(15)
nS
Cossⓘ -
Output Capacitance: 62(126)
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.063
Ohm
Package:
TSOP6
STT3599C
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STT3599C
Datasheet (PDF)
..1. Size:321K secos
stt3599c.pdf 
STT3599C (N-Ch) 3.7 A, 30 V, RDS(ON) 63 m (P-Ch) -2.7 A, -30 V, RDS(ON) 112 m Elektronische Bauelemente N & P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6These miniature surface mount MOSFETs utilize a high cell density Atrench process to provide low RDS(on) and to ensure minimal power
9.1. Size:658K secos
stt3585.pdf
STT3585 3.5A, 20V, RDS(ON) 75m-2.5A, -20V, RDS(ON) 160mElektronische Bauelemente N And P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION TSOP-6 The STT3585 provide the designer with best combination Aof fast switching, low on-resistance and cost effectiveness. ELThe TSOP-6 packag
9.2. Size:586K secos
stt3520c.pdf
STT3520C N-Ch: 3.7 A, 23 V, RDS(ON) 58 m P-Ch: -2.7 A, -23 V, RDS(ON) 112 m Elektronische Bauelemente N & P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of -C specifies halogen and lead-free TSOP-6 DESCRIPTION These miniature surface mount MOSFETs utilize high cell density Aprocess. Low RDS(on) assures minimal power loss and conserves Ee
Datasheet: IRFP360LC
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