STT3599C Specs and Replacement
Type Designator: STT3599C
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12(15) nS
Cossⓘ - Output Capacitance: 62(126) pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.063 Ohm
Package: TSOP6
STT3599C substitution
- MOSFET ⓘ Cross-Reference Search
STT3599C datasheet
stt3599c.pdf
STT3599C (N-Ch) 3.7 A, 30 V, RDS(ON) 63 m (P-Ch) -2.7 A, -30 V, RDS(ON) 112 m Elektronische Bauelemente N & P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high cell density A trench process to provide low RDS(on) and to ensure minimal power ... See More ⇒
stt3585.pdf
STT3585 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m Elektronische Bauelemente N And P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION TSOP-6 The STT3585 provide the designer with best combination A of fast switching, low on-resistance and cost effectiveness. E L The TSOP-6 packag... See More ⇒
stt3520c.pdf
STT3520C N-Ch 3.7 A, 23 V, RDS(ON) 58 m P-Ch -2.7 A, -23 V, RDS(ON) 112 m Elektronische Bauelemente N & P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of -C specifies halogen and lead-free TSOP-6 DESCRIPTION These miniature surface mount MOSFETs utilize high cell density A process. Low RDS(on) assures minimal power loss and conserves E e... See More ⇒
Detailed specifications: STT3457P, STT3458N, STT3463P, STT3470N, STT3471P, STT3490N, STT3520C, STT3585, AON7408, STT3810N, STT3922N, STT3962N, STT3962NE, STT3981, STT3998N, STT4443, STT6405
Keywords - STT3599C MOSFET specs
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