STT3922N MOSFET Datasheet: N-Ch, 20V, 4.1A. Full specification with pinout and replacement list

STT3922N Specs and Replacement

Type Designator: STT3922N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm

Package: TSOP6

STT3922N substitution

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STT3922N datasheet

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STT3922N 4.1A, 20V, RDS(ON) 47m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high A cell density trench process to provide low RDS(on) and to E L ensure minimal power loss and heat dissipation. ... See More ⇒

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STT3981 -1.6 A, -20 V, RDS(ON) 180 m P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION The STT3981 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The STT3981 is universally used for all comme... See More ⇒

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STT3962NE 2.3A , 60V , RDS(ON) 0.153 N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high A cell density trench process to provide low RDS(on) and to E L ensure minimal power loss and heat dissipation... See More ⇒

9.3. Size:438K secos
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STT3962N N-Channel Enhancement Mode Mos.FET 2.3 A, 60 V, RDS(ON) 0.153 Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize High Cell Density A E process. Low RDS(on) assures minimal power loss and conserves L energy, making this device ideal for use in powe... See More ⇒