Справочник MOSFET. STT3922N

 

STT3922N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: STT3922N
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 1.15 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 8 V
   Пороговое напряжение включения |Ugs(th)|: 0.4 V
   Максимально допустимый постоянный ток стока |Id|: 4.1 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 12 ns
   Сопротивление сток-исток открытого транзистора (Rds): 0.047 Ohm
   Тип корпуса: TSOP6

 Аналог (замена) для STT3922N

 

 

STT3922N Datasheet (PDF)

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 stt3922n.pdf

STT3922N STT3922N

STT3922N 4.1A, 20V, RDS(ON) 47m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high Acell density trench process to provide low RDS(on) and to ELensure minimal power loss and heat dissipation.

 9.1. Size:902K  secos
 stt3981.pdf

STT3922N STT3922N

STT3981 -1.6 A, -20 V, RDS(ON) 180 m P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION The STT3981 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The STT3981 is universally used for all comme

 9.2. Size:99K  secos
 stt3962ne.pdf

STT3922N STT3922N

STT3962NE 2.3A , 60V , RDS(ON) 0.153 N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high Acell density trench process to provide low RDS(on) and to ELensure minimal power loss and heat dissipation

 9.3. Size:438K  secos
 stt3962n.pdf

STT3922N STT3922N

STT3962N N-Channel Enhancement Mode Mos.FET 2.3 A, 60 V, RDS(ON) 0.153 Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6These miniature surface mount MOSFETs utilize High Cell Density AEprocess. Low RDS(on) assures minimal power loss and conserves Lenergy, making this device ideal for use in powe

 9.4. Size:163K  secos
 stt3998n.pdf

STT3922N STT3922N

STT3998N Dual N-Ch Enhancement Mode Mos.FET 3.7 A, 20 V, RDS(ON) 58 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TSOP-6DESCRIPTION A These miniature surface mount MOSFETs utilize a high cell density EL trench process to provide low RDS(on) and to ensure minimal power 6 5 4 loss and heat dissipation. Typic

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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