All MOSFET. STT3981 Datasheet

 

STT3981 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STT3981
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 1.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TSOP6

 STT3981 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STT3981 Datasheet (PDF)

 ..1. Size:902K  secos
 stt3981.pdf

STT3981 STT3981

STT3981 -1.6 A, -20 V, RDS(ON) 180 m P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION The STT3981 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The STT3981 is universally used for all comme

 9.1. Size:100K  secos
 stt3922n.pdf

STT3981 STT3981

STT3922N 4.1A, 20V, RDS(ON) 47m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high Acell density trench process to provide low RDS(on) and to ELensure minimal power loss and heat dissipation.

 9.2. Size:99K  secos
 stt3962ne.pdf

STT3981 STT3981

STT3962NE 2.3A , 60V , RDS(ON) 0.153 N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high Acell density trench process to provide low RDS(on) and to ELensure minimal power loss and heat dissipation

 9.3. Size:438K  secos
 stt3962n.pdf

STT3981 STT3981

STT3962N N-Channel Enhancement Mode Mos.FET 2.3 A, 60 V, RDS(ON) 0.153 Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6These miniature surface mount MOSFETs utilize High Cell Density AEprocess. Low RDS(on) assures minimal power loss and conserves Lenergy, making this device ideal for use in powe

 9.4. Size:163K  secos
 stt3998n.pdf

STT3981 STT3981

STT3998N Dual N-Ch Enhancement Mode Mos.FET 3.7 A, 20 V, RDS(ON) 58 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TSOP-6DESCRIPTION A These miniature surface mount MOSFETs utilize a high cell density EL trench process to provide low RDS(on) and to ensure minimal power 6 5 4 loss and heat dissipation. Typic

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SML50A19

 

 
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