SUM6K1N Datasheet and Replacement
Type Designator: SUM6K1N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 9 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: SOT363
SUM6K1N substitution
SUM6K1N Datasheet (PDF)
sum6k1n.pdf

SUM6K1N 0.15 W, 100 mA, 30 V Plastic Encapsulated Elektronische Bauelemente Dual N-channel MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Transistor elements independent, eliminating interference
Datasheet: STT3962N , STT3962NE , STT3981 , STT3998N , STT4443 , STT6405 , STT6602 , STT6802 , IRF9540N , SGM0410 , SSD04N65 , SSD20N10-130D , SSM9575 , SST3585 , 2N4003K , 2N60D , 2N60F .
History: MDIS2N65BTH | AOC2802
Keywords - SUM6K1N MOSFET datasheet
SUM6K1N cross reference
SUM6K1N equivalent finder
SUM6K1N lookup
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History: MDIS2N65BTH | AOC2802



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