All MOSFET. SGM0410 Datasheet

 

SGM0410 Datasheet and Replacement


   Type Designator: SGM0410
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.4 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: SOT89
 

 SGM0410 substitution

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SGM0410 Datasheet (PDF)

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SGM0410

SGM0410 3.5A , 100V , RDS(ON) 170 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOT-89 The SGM0410 provide the designer with the best Acombination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-89 package 4Top Vie

 0.1. Size:482K  secos
 sgm0410s.pdf pdf_icon

SGM0410

SGM0410S 2.2A , 100V , RDS(ON) 310 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOT-89 The SGM0410S provide the designer with the best Acombination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-89 pac

Datasheet: STT3962NE , STT3981 , STT3998N , STT4443 , STT6405 , STT6602 , STT6802 , SUM6K1N , IRF9540N , SSD04N65 , SSD20N10-130D , SSM9575 , SST3585 , 2N4003K , 2N60D , 2N60F , 2N60I .

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