8N60P MOSFET Datasheet: N-Ch, 600V, 8A. Full specification with pinout and replacement list

8N60P Specs and Replacement

Type Designator: 8N60P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 93 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220

8N60P substitution

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8N60P datasheet

..1. Size:748K wietron
8n60p 8n60f.pdf pdf_icon

8N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead(Pb)-Free 8 AMPERES DRAIN SOURCE VOLTAGE Description 600 VOLTAGE The WEITRON 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually... See More ⇒

0.1. Size:144K ixys
ixfr48n60p.pdf pdf_icon

IXFR 48N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 32 A Power MOSFET RDS(on) 150 m ISOPLUS247TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) VDSS TJ = 25 C to 150 C 600 V E153432 VDGR TJ... See More ⇒

0.2. Size:84K ixys
ixfn48n60p.pdf pdf_icon

IXFN 48N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 40 A Power MOSFET RDS(on) 140 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V miniBLOC, SOT-227 B (IXFN) VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V E153432 S VGSS Cont... See More ⇒

0.3. Size:171K ixys
ixtq18n60p ixtv18n60p.pdf pdf_icon