8N60P
MOSFET. Datasheet pdf. Equivalent
Type Designator: 8N60P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 147
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 26.8
nC
trⓘ - Rise Time: 58
nS
Cossⓘ -
Output Capacitance: 93
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2
Ohm
Package:
TO220
8N60P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
8N60P
Datasheet (PDF)
..1. Size:748K wietron
8n60p 8n60f.pdf 
8N60Surface Mount N-Channel Power MOSFETDRAIN CURRENTP b Lead(Pb)-Free8 AMPERESDRAIN SOURCE VOLTAGEDescription:600 VOLTAGEThe WEITRON 8N60 is a high voltage and high current powerMOSFET, designed to have better characteristics, such as fastswitching time, low gate charge, low on-state resistance and havea high rugged avalanche characteristics. This power MOSFET isusually
0.1. Size:144K ixys
ixfr48n60p.pdf
IXFR 48N60P VDSS = 600 VPolarHVTM HiPerFETID25 = 32 APower MOSFET RDS(on) 150 m ISOPLUS247TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)VDSS TJ = 25 C to 150 C 600 VE153432VDGR TJ
0.2. Size:84K ixys
ixfn48n60p.pdf
IXFN 48N60P VDSS = 600 VPolarHVTM HiPerFETID25 = 40 APower MOSFET RDS(on) 140 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VminiBLOC, SOT-227 B (IXFN)VDGR TJ = 25C to 150C; RGS = 1 M 600 VE153432SVGSS Cont
0.3. Size:171K ixys
ixtq18n60p ixtv18n60p.pdf
IXTQ 18N60P VDSS = 600 VPolarHVTMIXTV 18N60P ID25 = 18 APower MOSFET IXTV 18N60PS RDS(on) 420 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Continuous 30 VGVGSM Tranisent 40 VD (TAB)DSID25 TC = 25
0.4. Size:130K ixys
ixfq28n60p3 ixfh28n60p3.pdf
Advance Technical InformationPolar3TM HiperFETTM VDSS = 600VIXFQ28N60P3ID25 = 28APower MOSFETsIXFH28N60P3 RDS(on) 260m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-3P (IXFQ)GDSymbol Test Conditions Maximum RatingsSTabVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C, RGS = 1M 600 VTO-247 ( IX
0.5. Size:223K ixys
ixfk48n60p ixfx48n60p.pdf
IXFK 48N60P VDSS = 600 VPolarHVTM HiPerFETIXFX 48N60P ID2 = 48 APower MOSFET RDS(on) 135m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeTO-264 (IXFK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Continuou
0.6. Size:172K ixys
ixfh18n60p ixfv18n60p.pdf
IXFH 18N60P VDSS = 600 VPolarHVTM HiPerFETIXFV 18N60P ID25 = 18 APower MOSFET IXFV 18N60PS RDS(on) 400 m N-Channel Enhancement Modetrr 200 nsFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Co
0.7. Size:579K kec
kf8n60p-f.pdf
KF8N60P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF8N60PAThis planar stripe MOSFET has better characteristics, such as fastOCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERSGcorrection and switching mode power suppli
0.8. Size:443K convert
cs8n60f cs8n60p cs8n60u cs8n60d cs8n65f-b.pdf
CS8N60F,CS8N60P, nvertSuzhou Convert Semiconductor Co ., Ltd.CS8N60U,CS8N60D,CS8N65F-B600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS
0.9. Size:436K convert
cs8n60f cs8n60p cs8n60u cs8n60d.pdf
nvertCS8N60F,CS8N60P,CS8N60U,CS8N60DSuzhou Convert Semiconductor Co ., Ltd.600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS8N60F TO-220F
0.10. Size:405K cn haohai electr
h8n60p h8n60f.pdf
8N60 SeriesN-Channel MOSFET7.5A, 600V, N H FQP8N60C H8N60P P: TO-220AB8N60 HAOHAI 50Pcs 1000Pcs 5000PcsFQPF8N60C H8N60F F: TO-220FP8N60 Series Pin AssignmentFeaturesID=7.5AOriginative New Design
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