8N60P - описание и поиск аналогов

8N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead(Pb)-Free 8 AMPERES DRAIN SOURCE VOLTAGE Description 600 VOLTAGE The WEITRON 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually

IXFR 48N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 32 A Power MOSFET RDS(on) 150 m ISOPLUS247TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) VDSS TJ = 25 C to 150 C 600 V E153432 VDGR TJ

IXFN 48N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 40 A Power MOSFET RDS(on) 140 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V miniBLOC, SOT-227 B (IXFN) VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V E153432 S VGSS Cont

Advance Technical Information Polar3TM HiperFETTM VDSS = 600V IXFQ28N60P3 ID25 = 28A Power MOSFETs IXFH28N60P3 RDS(on) 260m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-3P (IXFQ) G D Symbol Test Conditions Maximum Ratings S Tab VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C, RGS = 1M 600 V TO-247 ( IX

IXFK 48N60P VDSS = 600 V PolarHVTM HiPerFET IXFX 48N60P ID2 = 48 A Power MOSFET RDS(on) 135m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGSS Continuou

IXFH 18N60P VDSS = 600 V PolarHVTM HiPerFET IXFV 18N60P ID25 = 18 A Power MOSFET IXFV 18N60PS RDS(on) 400 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Co

KF8N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF8N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G correction and switching mode power suppli

CS8N60F,CS8N60P, nvert Suzhou Convert Semiconductor Co ., Ltd. CS8N60U,CS8N60D,CS8N65F-B 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS

nvert CS8N60F,CS8N60P,CS8N60U,CS8N60D Suzhou Convert Semiconductor Co ., Ltd. 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS8N60F TO-220F

8N60 Series N-Channel MOSFET 7.5A, 600V, N H FQP8N60C H8N60P P TO-220AB 8N60 HAOHAI 50Pcs 1000Pcs 5000Pcs FQPF8N60C H8N60F F TO-220FP 8N60 Series Pin Assignment Features ID=7.5A Originative New Design