WTC1333 Datasheet and Replacement
Type Designator: WTC1333
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.55 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 25 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: SOT23
WTC1333 substitution
WTC1333 Datasheet (PDF)
wtc1333.pdf
WTC1333Surface Mount P-ChannelDRAIN CURRENT3 DRAINEnhancement Mode MOSFET-550m AMPERESDRAIN SOURCE VOLTAGE-20 VOLTAGE1GATEFeatures:2SOURCE*Super High Dense Cell Design For Low RDS(ON) 3 RDS(ON)
Datasheet: 4N60D , 4N60F , 4N60I , 4N60P , 8N60F , 8N60P , MGSF1P02 , WT4410M , 10N65 , WTC2301 , WTC2302 , WTC2305 , WTC2305DS , WTC2306 , WTC2312 , WTC4501 , WTC9435 .
History: 2SK1386
Keywords - WTC1333 MOSFET datasheet
WTC1333 cross reference
WTC1333 equivalent finder
WTC1333 lookup
WTC1333 substitution
WTC1333 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: 2SK1386
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