WTC1333 Specs and Replacement
Type Designator: WTC1333
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.55 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 25 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: SOT23
WTC1333 substitution
- MOSFET ⓘ Cross-Reference Search
WTC1333 datasheet
wtc1333.pdf
WTC1333 Surface Mount P-Channel DRAIN CURRENT 3 DRAIN Enhancement Mode MOSFET -550m AMPERES DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE Features 2 SOURCE *Super High Dense Cell Design For Low RDS(ON) 3 RDS(ON)... See More ⇒
Detailed specifications: 4N60D, 4N60F, 4N60I, 4N60P, 8N60F, 8N60P, MGSF1P02, WT4410M, 10N65, WTC2301, WTC2302, WTC2305, WTC2305DS, WTC2306, WTC2312, WTC4501, WTC9435
Keywords - WTC1333 MOSFET specs
WTC1333 cross reference
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WTC1333 substitution
WTC1333 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: HY3408APM
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