All MOSFET. WTC1333 Datasheet

 

WTC1333 Datasheet and Replacement


   Type Designator: WTC1333
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: SOT23
 

 WTC1333 substitution

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WTC1333 Datasheet (PDF)

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WTC1333

WTC1333Surface Mount P-ChannelDRAIN CURRENT3 DRAINEnhancement Mode MOSFET-550m AMPERESDRAIN SOURCE VOLTAGE-20 VOLTAGE1GATEFeatures:2SOURCE*Super High Dense Cell Design For Low RDS(ON) 3 RDS(ON)

Datasheet: 4N60D , 4N60F , 4N60I , 4N60P , 8N60F , 8N60P , MGSF1P02 , WT4410M , STP80NF70 , WTC2301 , WTC2302 , WTC2305 , WTC2305DS , WTC2306 , WTC2312 , WTC4501 , WTC9435 .

History: IRFPS37N50APBF | NCEP035N60AG | IRF7341PBF | 2P986B | MSU9N90P | 6N60G | TMP4N60AZ

Keywords - WTC1333 MOSFET datasheet

 WTC1333 cross reference
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