All MOSFET. WTC2305DS Datasheet

 

WTC2305DS Datasheet and Replacement


   Type Designator: WTC2305DS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 375 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: SOT23
      - MOSFET Cross-Reference Search

 

WTC2305DS Datasheet (PDF)

 ..1. Size:2120K  wietron
 wtc2305ds.pdf pdf_icon

WTC2305DS

WTC2305DSP-Channel Enhancement DRAIN CURRENT3 DRAINMode Power MOSFET -3.5 AMPERESDRAIN SOURCE VOLTAGE-8 VOLTAGE1GATE2Features:SOURCE3*Super High Dense Cell Design For Low RDS(ON)1 RDS(ON)

 7.1. Size:2328K  wietron
 wtc2305.pdf pdf_icon

WTC2305DS

WTC2305P-Channel Enhancement DRAIN CURRENT3 DRAINMode Power MOSFET -4.2 AMPERESDRAIN SOURCE VOLTAGE-30 VOLTAGE1GATE2Features:SOURCE3*Super High Dense Cell Design For Low RDS(ON) 1 RDS(ON)

 8.1. Size:723K  wietron
 wtc2302.pdf pdf_icon

WTC2305DS

WTC2302N-Channel Enhancement DRAIN CURRENT3 DRAINMode Power MOSFET2.3 AMPERESP b Lead(Pb)-FreeDRAIN SOUCE VOLTAGE20 VOLTAGE1GATE2Features:SOURCE3*Super High Dense Cell Design For Low RDS(ON)1 RDS(ON)

 8.2. Size:566K  wietron
 wtc2301.pdf pdf_icon

WTC2305DS

WTC2301P-Channel Enhancement DRAIN CURRENT3 DRAINMode Power MOSFET -2.3 AMPERESP b Lead(Pb)-Free DRAIN SOURCE VOLTAGE-20 VOLTAGE1GATE2Features:SOURCE3*Super High Dense Cell Design For Low RDS(ON)1RDS(ON)

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History: TK2P60D | IRFBG20

Keywords - WTC2305DS MOSFET datasheet

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