All MOSFET. WTC2305DS Datasheet

 

WTC2305DS MOSFET. Datasheet pdf. Equivalent

Type Designator: WTC2305DS

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.225 W

Maximum Drain-Source Voltage |Vds|: 8 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Drain Current |Id|: 3.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 375 pF

Maximum Drain-Source On-State Resistance (Rds): 0.068 Ohm

Package: SOT23

WTC2305DS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WTC2305DS Datasheet (PDF)

1.1. wtc2305ds.pdf Size:2120K _wietron

WTC2305DS
WTC2305DS

WTC2305DS P-Channel Enhancement DRAIN CURRENT 3 DRAIN Mode Power MOSFET -3.5 AMPERES DRAIN SOURCE VOLTAGE -8 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS(ON) 1 RDS(ON) <68m?@VGS=-4.5V 2 *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Po

3.1. wtc2305.pdf Size:2328K _wietron

WTC2305DS
WTC2305DS

WTC2305 P-Channel Enhancement DRAIN CURRENT 3 DRAIN Mode Power MOSFET -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS(ON) 1 RDS(ON) <70m?@VGS=10V 2 *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Pow

4.1. wtc2301.pdf Size:566K _wietron

WTC2305DS
WTC2305DS

WTC2301 P-Channel Enhancement DRAIN CURRENT 3 DRAIN Mode Power MOSFET -2.3 AMPERES P b Lead(Pb)-Free DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS(ON) 1 RDS(ON)<100m?@VGS=-4.5V 2 *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOT-23 Applications *Power Management in Notebook Computer *Portable Equipm

4.2. wtc2302.pdf Size:723K _wietron

WTC2305DS
WTC2305DS

WTC2302 N-Channel Enhancement DRAIN CURRENT 3 DRAIN Mode Power MOSFET 2.3 AMPERES P b Lead(Pb)-Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) 1 RDS(ON) <60m ?@VGS =4.5V 2 *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOT-23 Maximum Ratings(TA=25? Unless Otherwise Specified) Rating Symbol Val

4.3. wtc2306.pdf Size:792K _wietron

WTC2305DS
WTC2305DS

WTC2306 3 DRAIN N-Channel Enhancement DRAIN CURRENT Mode Power MOSFET 5.8 AMPERES DRAIN SOURCE VOLTAGE P b Lead(Pb)-Free 1 30 VOLTAGE GATE 2 Features: SOURCE * Super High Dense Cell Design For Low RDS(on) RDS(on) < 38m? @ V = 10V GS 3 * Rugged and Reliable 1 * Simple Drive Requirement 2 * SOT-23 Package Applications: SOT-23 * Power Management in Notebook Computer * Portab

Datasheet: 8N60F , 8N60P , MGSF1P02 , WT4410M , WTC1333 , WTC2301 , WTC2302 , WTC2305 , IRFP260N , WTC2306 , WTC2312 , WTC4501 , WTC9435 , WTD40N03 , WTD9435 , WTD9575 , WTD9973 .

 


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