WTC2306 MOSFET Datasheet: N-Ch, 30V, 5.8A. Full specification with pinout and replacement list

WTC2306 Specs and Replacement

Type Designator: WTC2306

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: SOT23

WTC2306 substitution

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WTC2306 datasheet

..1. Size:792K wietron
wtc2306.pdf pdf_icon

WTC2306 3 DRAIN N-Channel Enhancement DRAIN CURRENT Mode Power MOSFET 5.8 AMPERES DRAIN SOURCE VOLTAGE P b Lead(Pb)-Free 1 30 VOLTAGE GATE 2 Features SOURCE * Super High Dense Cell Design For Low RDS(on) RDS(on) ... See More ⇒

8.1. Size:2120K wietron
wtc2305ds.pdf pdf_icon

WTC2305DS P-Channel Enhancement DRAIN CURRENT 3 DRAIN Mode Power MOSFET -3.5 AMPERES DRAIN SOURCE VOLTAGE -8 VOLTAGE 1 GATE 2 Features SOURCE 3 *Super High Dense Cell Design For Low RDS(ON) 1 RDS(ON) ... See More ⇒

8.2. Size:723K wietron
wtc2302.pdf pdf_icon

WTC2302 N-Channel Enhancement DRAIN CURRENT 3 DRAIN Mode Power MOSFET 2.3 AMPERES P b Lead(Pb)-Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) 1 RDS(ON) ... See More ⇒

8.3. Size:2328K wietron
wtc2305.pdf pdf_icon

WTC2305 P-Channel Enhancement DRAIN CURRENT 3 DRAIN Mode Power MOSFET -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE 2 Features SOURCE 3 *Super High Dense Cell Design For Low RDS(ON) 1 RDS(ON) ... See More ⇒