All MOSFET. WTC2306 Datasheet

 

WTC2306 Datasheet and Replacement


   Type Designator: WTC2306
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SOT23
 

 WTC2306 substitution

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WTC2306 Datasheet (PDF)

 ..1. Size:792K  wietron
 wtc2306.pdf pdf_icon

WTC2306

WTC23063 DRAINN-Channel Enhancement DRAIN CURRENTMode Power MOSFET5.8 AMPERESDRAIN SOURCE VOLTAGEP b Lead(Pb)-Free 130 VOLTAGEGATE2Features:SOURCE* Super High Dense Cell Design For Low RDS(on) RDS(on)

 8.1. Size:2120K  wietron
 wtc2305ds.pdf pdf_icon

WTC2306

WTC2305DSP-Channel Enhancement DRAIN CURRENT3 DRAINMode Power MOSFET -3.5 AMPERESDRAIN SOURCE VOLTAGE-8 VOLTAGE1GATE2Features:SOURCE3*Super High Dense Cell Design For Low RDS(ON)1 RDS(ON)

 8.2. Size:723K  wietron
 wtc2302.pdf pdf_icon

WTC2306

WTC2302N-Channel Enhancement DRAIN CURRENT3 DRAINMode Power MOSFET2.3 AMPERESP b Lead(Pb)-FreeDRAIN SOUCE VOLTAGE20 VOLTAGE1GATE2Features:SOURCE3*Super High Dense Cell Design For Low RDS(ON)1 RDS(ON)

 8.3. Size:2328K  wietron
 wtc2305.pdf pdf_icon

WTC2306

WTC2305P-Channel Enhancement DRAIN CURRENT3 DRAINMode Power MOSFET -4.2 AMPERESDRAIN SOURCE VOLTAGE-30 VOLTAGE1GATE2Features:SOURCE3*Super High Dense Cell Design For Low RDS(ON) 1 RDS(ON)

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Datasheet: 8N60P , MGSF1P02 , WT4410M , WTC1333 , WTC2301 , WTC2302 , WTC2305 , WTC2305DS , RU6888R , WTC2312 , WTC4501 , WTC9435 , WTD40N03 , WTD9435 , WTD9575 , WTD9973 , WTG3043 .

History: FDS8896 | SI2301-P | FDS89141 | FDS8984 | 2SK3819 | 45N06 | 2SK3818

Keywords - WTC2306 MOSFET datasheet

 WTC2306 cross reference
 WTC2306 equivalent finder
 WTC2306 lookup
 WTC2306 substitution
 WTC2306 replacement

 

 
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