WTK4435 Datasheet and Replacement
Type Designator: WTK4435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 1400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP8
- MOSFET Cross-Reference Search
WTK4435 Datasheet (PDF)
wtk4435.pdf

WTK4435Surface Mount P-ChannelEnhancement Mode MOSFETDRAIN CURRENTP b Lead(Pb)-Free-8 AMPERESDRAIN SOURCE VOLTAGE-30 VOLTAGEFeatures:* Super high dense* Cell design for low RDS(ON)* R
wtk4424.pdf

WTK4424Surface Mount N-ChannelDRAIN CURRENTEnhancement Mode MOSFET13.8 AMPERESDRAIN SOURCE VOLTAGEP b Lead(Pb)-Free30 VOLTAGEDescription:The WTK4424 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.1The SOP-8 package is universally preferred for all commercial-industrial surface mount
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Keywords - WTK4435 MOSFET datasheet
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History: TK2P60D | IRFBG20



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