All MOSFET. WTK6680 Datasheet

 

WTK6680 Datasheet and Replacement


   Type Designator: WTK6680
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.3 nS
   Cossⓘ - Output Capacitance: 285 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: SOP8
 

 WTK6680 substitution

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WTK6680 Datasheet (PDF)

 ..1. Size:683K  wietron
 wtk6680.pdf pdf_icon

WTK6680

WTK6680Surface Mount N-ChannelDRAIN CURRENTEnhancement Mode MOSFET11.5 AMPERESDRAIN SOURCE VOLTAGEP b Lead(Pb)-Free30 VOLTAGEDescription:The WTK6680 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.1The SOP-8 package is universally preferred for all commercial-industrial surface mount

 9.1. Size:1082K  wietron
 wtk6679.pdf pdf_icon

WTK6680

WTK6679Surface Mount P-ChannelEnhancement Mode MOSFETDRAIN CURRENTP b Lead(Pb)-Free-14 AMPERESDRAIN SOURCE VOLTAGEFeatures:-30 VOLTAGE* Super high dense* Cell design for low RDS(ON)* R

Datasheet: WTD9973 , WTG3043 , WTK4224 , WTK4228 , WTK4424 , WTK4435 , WTK4501 , WTK6679 , RU7088R , WTK9410 , WTK9431 , WTK9435 , WTK9971 , WTL2602 , WTL2622 , WTM2310A , WTN9435 .

History: SI4431BDY

Keywords - WTK6680 MOSFET datasheet

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