WTK6680 MOSFET. Datasheet pdf. Equivalent
Type Designator: WTK6680
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 11.5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 7.3 nS
Drain-Source Capacitance (Cd): 285 pF
Maximum Drain-Source On-State Resistance (Rds): 0.011 Ohm
Package: SOP8
WTK6680 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WTK6680 Datasheet (PDF)
1.1. wtk6680.pdf 
Size:683K _wietron
WTK6680 Surface Mount N-Channel DRAIN CURRENT Enhancement Mode MOSFET 11.5 AMPERES DRAIN SOURCE VOLTAGE P b Lead(Pb)-Free 30 VOLTAGE Description: The WTK6680 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 1 The SOP-8 package is universally preferred for all commercial-industrial surface mount ap
5.1. wtk6679.pdf Size:1082K _wietron
WTK6679 Surface Mount P-Channel Enhancement Mode MOSFET DRAIN CURRENT P b Lead(Pb)-Free -14 AMPERES DRAIN SOURCE VOLTAGE Features: -30 VOLTAGE * Super high dense * Cell design for low RDS(ON) * R <10m?@VGS = -10V DS(ON) * R <13m?@VGS = -4.5V DS(ON) * Simple Drive Requirement * Lower On-resistance * Fast Switching 1 SOP-8 Description: The WTK6679 provide the designer with the b
Datasheet: SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 , PT4410 , IRFP260N , SI2301 , SI2305 , XP152A12COMR , AO3401 , AO3407 , PT4435 , SM103 , SM104 .
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