All MOSFET. WTN9435 Datasheet

 

WTN9435 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WTN9435
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.2 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 222 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT223

 WTN9435 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WTN9435 Datasheet (PDF)

 ..1. Size:529K  wietron
 wtn9435.pdf

WTN9435 WTN9435

WTN9435Surface Mount P-ChannelDRAIN CURRENTEnhancement Mode Power MOSFET-6.0 AMPERES2,4 DRAINDRAIN SOURCE VOLTAGEP b Lead(Pb)-Free-30 VOLTAGE1GATE41. GATE2. DRAINFeatures:13. SOURCE32SOURCE 4. DRAIN 3* Super high dense cell design for low RDS(ON) RDS(ON)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFBG20

 

 
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