CEB01N65 Specs and Replacement
Type Designator: CEB01N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14.6 nS
Cossⓘ - Output Capacitance: 45 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 10.5 Ohm
Package: TO263
CEB01N65 substitution
CEB01N65 Specs
cep01n65 ceb01n65 cef01n65.pdf
CEP01N65/CEB01N65 CEF01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP01N65 650V 10.5 1.3A 10V CEB01N65 650V 10.5 1.3A 10V CEF01N65 650V 10.5 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SE... See More ⇒
cep01n6g ceb01n6g cef01n6g.pdf
CEP01N6G/CEB01N6G CEF01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP01N6G 600V 9.3 1A 10V CEB01N6G 600V 9.3 1A 10V CEF01N6G 600V 9.3 1A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES S TO-263(DD-PA... See More ⇒
Detailed specifications: WTN9435 , WTN9575 , WTN9973 , WTU1333 , WTX1012 , WTX7002 , CEA6200 , CEA6426 , IRF730 , CEB01N6G , CEB02N65A , CEB02N65G , CEB02N6A , CEB02N6G , CEB02N7G , CEB02N9 , CEB03N8 .
History: 2N7125
Keywords - CEB01N65 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
