All MOSFET. CEB01N65 Datasheet

 

CEB01N65 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEB01N65

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 41 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 1.3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 14.6 nS

Drain-Source Capacitance (Cd): 45 pF

Maximum Drain-Source On-State Resistance (Rds): 10.5 Ohm

Package: TO263

CEB01N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CEB01N65 Datasheet (PDF)

1.1. cep01n65 ceb01n65 cef01n65.pdf Size:424K _cet

CEB01N65
CEB01N65

CEP01N65/CEB01N65 CEF01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP01N65 650V 10.5? 1.3A 10V CEB01N65 650V 10.5? 1.3A 10V CEF01N65 650V 10.5? 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES S

3.1. cep01n6g ceb01n6g cef01n6g.pdf Size:368K _cet

CEB01N65
CEB01N65

CEP01N6G/CEB01N6G CEF01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP01N6G 600V 9.3? 1A 10V CEB01N6G 600V 9.3? 1A 10V CEF01N6G 600V 9.3? 1A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES S TO-263(DD-PAK) TO-22

 

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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