All MOSFET. CEB01N65 Datasheet

 

CEB01N65 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEB01N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 1.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.7 nC
   trⓘ - Rise Time: 14.6 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 10.5 Ohm
   Package: TO263

 CEB01N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEB01N65 Datasheet (PDF)

 ..1. Size:424K  cet
 cep01n65 ceb01n65 cef01n65.pdf

CEB01N65 CEB01N65

CEP01N65/CEB01N65 CEF01N65N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP01N65 650V 10.5 1.3A 10VCEB01N65 650V 10.5 1.3A 10VCEF01N65 650V 10.5 1.3A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GCEB SERIESCEP SERIES CEF SE

 7.1. Size:368K  cet
 cep01n6g ceb01n6g cef01n6g.pdf

CEB01N65 CEB01N65

CEP01N6G/CEB01N6G CEF01N6GN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP01N6G 600V 9.3 1A 10VCEB01N6G 600V 9.3 1A 10VCEF01N6G 600V 9.3 1A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GCEB SERIESCEP SERIES CEF SERIESSTO-263(DD-PA

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AOTF9N90 | NDB710A | 2SK703

 

 
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