CEB02N6A PDF and Equivalents Search

 

CEB02N6A PDF Specs and Replacement


   Type Designator: CEB02N6A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: TO263
 

 CEB02N6A substitution

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CEB02N6A PDF Specs

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cep02n6a ceb02n6a cef02n6a.pdf pdf_icon

CEB02N6A

CEP02N6A/CEB02N6A CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6A 600V 8.5 1.4A 10V CEB02N6A 600V 8.5 1.4A 10V CEF02N6A 600V 8.5 1.4A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES S TO-263(... See More ⇒

 7.1. Size:342K  1
cef02n65d cep02n65d ceb02n65d.pdf pdf_icon

CEB02N6A

CEP02N65D/CEB02N65D CEF02N65D PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65D 650V 6.9 2A 10V CEB02N65D 650V 6.9 2A 10V CEF02N65D 650V 6.9 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF S... See More ⇒

 7.2. Size:391K  cet
cep02n65a ceb02n65a cef02n65a.pdf pdf_icon

CEB02N6A

CEP02N65A/CEB02N65A CEF02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65A 650V 10.5 1.3A 10V CEB02N65A 650V 10.5 1.3A 10V CEF02N65A 650V 10.5 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES C... See More ⇒

 7.3. Size:393K  cet
cep02n6g ceb02n6g cef02n6g.pdf pdf_icon

CEB02N6A

CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6G 600V 5 2.2A 10V CEB02N6G 600V 5 2.2A 10V CEF02N6G 600V 5 2.2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK... See More ⇒

Detailed specifications: WTX1012 , WTX7002 , CEA6200 , CEA6426 , CEB01N65 , CEB01N6G , CEB02N65A , CEB02N65G , IRF840 , CEB02N6G , CEB02N7G , CEB02N9 , CEB03N8 , CEB04N6 , CEB04N65 , CEB04N7G , CEB05N65 .

Keywords - CEB02N6A MOSFET specs

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