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CEB02N9 Specs and Replacement


   Type Designator: CEB02N9
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.8 Ohm
   Package: TO263
 

 CEB02N9 substitution

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CEB02N9 Specs

 ..1. Size:391K  cet
cep02n9 ceb02n9 cef02n9.pdf pdf_icon

CEB02N9

CEP02N9/CEB02N9 CEF02N9 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N9 900V 6.8 2.6A 10V CEB02N9 900V 6.8 2.6A 10V CEF02N9 900V 6.8 2.6A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES ... See More ⇒

 8.1. Size:342K  1
cef02n65d cep02n65d ceb02n65d.pdf pdf_icon

CEB02N9

CEP02N65D/CEB02N65D CEF02N65D PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65D 650V 6.9 2A 10V CEB02N65D 650V 6.9 2A 10V CEF02N65D 650V 6.9 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF S... See More ⇒

 8.2. Size:391K  cet
cep02n65a ceb02n65a cef02n65a.pdf pdf_icon

CEB02N9

CEP02N65A/CEB02N65A CEF02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65A 650V 10.5 1.3A 10V CEB02N65A 650V 10.5 1.3A 10V CEF02N65A 650V 10.5 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES C... See More ⇒

 8.3. Size:393K  cet
cep02n6g ceb02n6g cef02n6g.pdf pdf_icon

CEB02N9

CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6G 600V 5 2.2A 10V CEB02N6G 600V 5 2.2A 10V CEF02N6G 600V 5 2.2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK... See More ⇒

Detailed specifications: CEA6426 , CEB01N65 , CEB01N6G , CEB02N65A , CEB02N65G , CEB02N6A , CEB02N6G , CEB02N7G , IRF540 , CEB03N8 , CEB04N6 , CEB04N65 , CEB04N7G , CEB05N65 , CEB06N7 , CEB07N65 , CEB07N65A .

Keywords - CEB02N9 MOSFET specs

 CEB02N9 cross reference
 CEB02N9 equivalent finder
 CEB02N9 lookup
 CEB02N9 substitution
 CEB02N9 replacement

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