CEB03N8 MOSFET Datasheet: N-Ch, 800V, 3A. Full specification with pinout and replacement list

CEB03N8 Specs and Replacement

Type Designator: CEB03N8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 70 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm

Package: TO263

CEB03N8 substitution

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CEB03N8 datasheet

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CEP03N8/CEB03N8 CEF03N8 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP03N8 800V 4.8 3A 10V CEB03N8 800V 4.8 3A 10V CEF03N8 800V 4.8 3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK)... See More ⇒

Detailed specifications: CEB01N65 , CEB01N6G , CEB02N65A , CEB02N65G , CEB02N6A , CEB02N6G , CEB02N7G , CEB02N9 , 50N06 , CEB04N6 , CEB04N65 , CEB04N7G , CEB05N65 , CEB06N7 , CEB07N65 , CEB07N65A , CEB07N7 .