CEB03N8 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEB03N8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 3 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 34 nS
Drain-Source Capacitance (Cd): 70 pF
Maximum Drain-Source On-State Resistance (Rds): 4.8 Ohm
Package: TO263
CEB03N8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEB03N8 Datasheet (PDF)
1.1. cep03n8 ceb03n8 cef03n8.pdf 
Size:395K _cet
CEP03N8/CEB03N8 CEF03N8 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP03N8 800V 4.8? 3A 10V CEB03N8 800V 4.8? 3A 10V CEF03N8 800V 4.8? 3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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