CEB03N8 Specs and Replacement
Type Designator: CEB03N8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: TO263
CEB03N8 substitution
CEB03N8 Specs
cep03n8 ceb03n8 cef03n8.pdf
CEP03N8/CEB03N8 CEF03N8 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP03N8 800V 4.8 3A 10V CEB03N8 800V 4.8 3A 10V CEF03N8 800V 4.8 3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK)... See More ⇒
Detailed specifications: CEB01N65 , CEB01N6G , CEB02N65A , CEB02N65G , CEB02N6A , CEB02N6G , CEB02N7G , CEB02N9 , 50N06 , CEB04N6 , CEB04N65 , CEB04N7G , CEB05N65 , CEB06N7 , CEB07N65 , CEB07N65A , CEB07N7 .
History: SVF4N60CAMJ
Keywords - CEB03N8 MOSFET specs
CEB03N8 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SVF4N60CAMJ
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MOSFET: AP3N50K | AP3N50F | AP3912GD
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