All MOSFET. CEB03N8 Datasheet

 

CEB03N8 Datasheet and Replacement


   Type Designator: CEB03N8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO263
 

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CEB03N8 Datasheet (PDF)

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CEB03N8

CEP03N8/CEB03N8CEF03N8N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP03N8 800V 4.8 3A 10VCEB03N8 800V 4.8 3A 10VCEF03N8 800V 4.8 3A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)

Datasheet: CEB01N65 , CEB01N6G , CEB02N65A , CEB02N65G , CEB02N6A , CEB02N6G , CEB02N7G , CEB02N9 , 50N06 , CEB04N6 , CEB04N65 , CEB04N7G , CEB05N65 , CEB06N7 , CEB07N65 , CEB07N65A , CEB07N7 .

History: ME4473-G | H8N60P | NTHL033N65S3HF | SI4860DY

Keywords - CEB03N8 MOSFET datasheet

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