CEB03N8 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEB03N8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 3 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 34 nS
Drain-Source Capacitance (Cd): 70 pF
Maximum Drain-Source On-State Resistance (Rds): 4.8 Ohm
Package: TO263
CEB03N8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEB03N8 Datasheet (PDF)
1.1. cep03n8 ceb03n8 cef03n8.pdf 
Size:395K _cet
CEP03N8/CEB03N8 CEF03N8 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP03N8 800V 4.8? 3A 10V CEB03N8 800V 4.8? 3A 10V CEF03N8 800V 4.8? 3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220
Datasheet: PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .
