CEB04N6 Datasheet. Specs and Replacement
Type Designator: CEB04N6 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO263
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CEB04N6 substitution
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CEB04N6 datasheet
cep04n6 ceb04n6 cef04n6.pdf
CEP04N6/CEB04N6 CEF04N6 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP04N6 600V 2.4 4.2A 10V CEB04N6 600V 2.4 4.2A 10V CEF04N6 600V 2.4 4.2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SER... See More ⇒
cep04n65 ceb04n65 cef04n65.pdf
CEP04N65/CEB04N65 CEF04N65 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP04N65 650V 2.8 4A 10V CEB04N65 650V 2.8 4A 10V CEF04N65 650V 2.8 4A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SER... See More ⇒
cep04n7g ceb04n7g cef04n7g.pdf
CEP04N7G/CEB04N7G CEF04N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP04N7G 700V 3.3 4A 10V CEB04N7G 700V 3.3 4A 10V CEF04N7G 700V 3.3 4A d 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PA... See More ⇒
Detailed specifications: CEB01N6G, CEB02N65A, CEB02N65G, CEB02N6A, CEB02N6G, CEB02N7G, CEB02N9, CEB03N8, IRFP460, CEB04N65, CEB04N7G, CEB05N65, CEB06N7, CEB07N65, CEB07N65A, CEB07N7, CEF02N65A
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