CEB04N65 Datasheet and Replacement
Type Designator: CEB04N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO263
CEB04N65 substitution
CEB04N65 Datasheet (PDF)
cep04n65 ceb04n65 cef04n65.pdf

CEP04N65/CEB04N65CEF04N65PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP04N65 650V 2.8 4A 10VCEB04N65 650V 2.8 4A 10VCEF04N65 650V 2.8 4A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SER
cep04n6 ceb04n6 cef04n6.pdf

CEP04N6/CEB04N6CEF04N6PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP04N6 600V 2.4 4.2A 10VCEB04N6 600V 2.4 4.2A 10VCEF04N6 600V 2.4 4.2A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SER
cep04n7g ceb04n7g cef04n7g.pdf

CEP04N7G/CEB04N7G CEF04N7GN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP04N7G 700V 3.3 4A 10VCEB04N7G 700V 3.3 4A 10VCEF04N7G 700V 3.3 4A d 10VSuper high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PA
Datasheet: CEB02N65A , CEB02N65G , CEB02N6A , CEB02N6G , CEB02N7G , CEB02N9 , CEB03N8 , CEB04N6 , IRF640 , CEB04N7G , CEB05N65 , CEB06N7 , CEB07N65 , CEB07N65A , CEB07N7 , CEF02N65A , CEF02N65G .
Keywords - CEB04N65 MOSFET datasheet
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