CEF02N6G Specs and Replacement

Type Designator: CEF02N6G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO220F

CEF02N6G substitution

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CEF02N6G datasheet

 ..1. Size:393K  cet
cep02n6g ceb02n6g cef02n6g.pdf pdf_icon

CEF02N6G

CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6G 600V 5 2.2A 10V CEB02N6G 600V 5 2.2A 10V CEF02N6G 600V 5 2.2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK... See More ⇒

 7.1. Size:342K  1
cef02n65d cep02n65d ceb02n65d.pdf pdf_icon

CEF02N6G

CEP02N65D/CEB02N65D CEF02N65D PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65D 650V 6.9 2A 10V CEB02N65D 650V 6.9 2A 10V CEF02N65D 650V 6.9 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF S... See More ⇒

 7.2. Size:391K  cet
cep02n65a ceb02n65a cef02n65a.pdf pdf_icon

CEF02N6G

CEP02N65A/CEB02N65A CEF02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65A 650V 10.5 1.3A 10V CEB02N65A 650V 10.5 1.3A 10V CEF02N65A 650V 10.5 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES C... See More ⇒

 7.3. Size:393K  cet
cep02n65g ceb02n65g cef02n65g.pdf pdf_icon

CEF02N6G

CEP02N65G/CEB02N65G CEF02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65G 650V 5.5 2A 10V CEB02N65G 650V 5.5 2A 10V CEF02N65G 650V 5.5 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(... See More ⇒

Detailed specifications: CEB05N65, CEB06N7, CEB07N65, CEB07N65A, CEB07N7, CEF02N65A, CEF02N65G, CEF02N6A, 10N60, CEF02N7G, CEF02N9, CEF03N8, CEF04N6, CEF04N65, CEF04N7G, CEF05N65, CEF06N7

Keywords - CEF02N6G MOSFET specs

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