All MOSFET. CEF03N8 Datasheet

 

CEF03N8 Datasheet and Replacement


   Type Designator: CEF03N8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO220F
 

 CEF03N8 substitution

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CEF03N8 Datasheet (PDF)

 ..1. Size:395K  cet
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CEF03N8

CEP03N8/CEB03N8CEF03N8N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP03N8 800V 4.8 3A 10VCEB03N8 800V 4.8 3A 10VCEF03N8 800V 4.8 3A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)

Datasheet: CEB07N65A , CEB07N7 , CEF02N65A , CEF02N65G , CEF02N6A , CEF02N6G , CEF02N7G , CEF02N9 , IRF9540 , CEF04N6 , CEF04N65 , CEF04N7G , CEF05N65 , CEF06N7 , CEF07N65 , CEF07N65A , CEF07N7 .

History: SI7972DP | BL30N65-W

Keywords - CEF03N8 MOSFET datasheet

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