CEF03N8 Specs and Replacement
Type Designator: CEF03N8
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: TO220F
CEF03N8 substitution
- MOSFET ⓘ Cross-Reference Search
CEF03N8 datasheet
cep03n8 ceb03n8 cef03n8.pdf
CEP03N8/CEB03N8 CEF03N8 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP03N8 800V 4.8 3A 10V CEB03N8 800V 4.8 3A 10V CEF03N8 800V 4.8 3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK)... See More ⇒
Detailed specifications: CEB07N65A, CEB07N7, CEF02N65A, CEF02N65G, CEF02N6A, CEF02N6G, CEF02N7G, CEF02N9, 2N7000, CEF04N6, CEF04N65, CEF04N7G, CEF05N65, CEF06N7, CEF07N65, CEF07N65A, CEF07N7
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