CEF07N65A Specs and Replacement
Type Designator: CEF07N65A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 115 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
Package: TO220F
CEF07N65A substitution
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CEF07N65A datasheet
cep07n65a ceb07n65a cef07n65a.pdf
CEP07N65A/CEB07N65A CEF07N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP07N65A 650V 1.45 7A 10V CEB07N65A 650V 1.45 7A 10V CEF07N65A 650V 1.45 7A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G CEB SERIES CEP SERIES CE... See More ⇒
cep07n65 ceb07n65 cef07n65.pdf
CEP07N65/CEB07N65 CEF07N65 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP07N65 650V 1.3 7A 10V CEB07N65 650V 1.3 7A 10V CEF07N65 650V 1.3 7A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SER... See More ⇒
cep07n7 ceb07n7 cef07n7.pdf
CEP07N7/CEB07N7 CEF07N7 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP07N7 700V 1.5 6.6A 10V CEB07N7 700V 1.5 6.6A 10V CEF07N7 700V 1.5 6.6A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SER... See More ⇒
Detailed specifications: CEF02N9, CEF03N8, CEF04N6, CEF04N65, CEF04N7G, CEF05N65, CEF06N7, CEF07N65, AON7408, CEF07N7, CEP01N65, CEP01N6G, CEP02N65A, CEP02N65G, CEP02N6A, CEP02N6G, CEP02N7G
Keywords - CEF07N65A MOSFET specs
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