All MOSFET. CEP02N7G Datasheet

 

CEP02N7G Datasheet and Replacement


   Type Designator: CEP02N7G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 12.5 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.75 Ohm
   Package: TO220
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CEP02N7G Datasheet (PDF)

 ..1. Size:617K  cet
 cep02n7g ceb02n7g cef02n7g.pdf pdf_icon

CEP02N7G

CEP02N7G/CEB02N7GCEF02N7GN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP02N7G 700V 6.75 2A 10VCEB02N7G 700V 6.75 2A 10VCEF02N7G 700V 6.75 2A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-

 8.1. Size:342K  1
 cef02n65d cep02n65d ceb02n65d.pdf pdf_icon

CEP02N7G

CEP02N65D/CEB02N65D CEF02N65DPRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP02N65D 650V 6.9 2A 10VCEB02N65D 650V 6.9 2A 10VCEF02N65D 650V 6.9 2A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF S

 8.2. Size:391K  cet
 cep02n9 ceb02n9 cef02n9.pdf pdf_icon

CEP02N7G

CEP02N9/CEB02N9CEF02N9PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP02N9 900V 6.8 2.6A 10VCEB02N9 900V 6.8 2.6A 10VCEF02N9 900V 6.8 2.6A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIES

 8.3. Size:391K  cet
 cep02n65a ceb02n65a cef02n65a.pdf pdf_icon

CEP02N7G

CEP02N65A/CEB02N65ACEF02N65AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP02N65A 650V 10.5 1.3A 10VCEB02N65A 650V 10.5 1.3A 10VCEF02N65A 650V 10.5 1.3A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GCEB SERIESCEP SERIES C

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Keywords - CEP02N7G MOSFET datasheet

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