CEP02N7G. Аналоги и основные параметры

Наименование производителя: CEP02N7G

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 60 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 12.5 ns

Cossⓘ - Выходная емкость: 55 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 6.75 Ohm

Тип корпуса: TO220

Аналог (замена) для CEP02N7G

- подборⓘ MOSFET транзистора по параметрам

 

CEP02N7G даташит

 ..1. Size:617K  cet
 cep02n7g ceb02n7g cef02n7g.pdf pdf_icon

CEP02N7G

CEP02N7G/CEB02N7G CEF02N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N7G 700V 6.75 2A 10V CEB02N7G 700V 6.75 2A 10V CEF02N7G 700V 6.75 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-

 8.1. Size:342K  1
 cef02n65d cep02n65d ceb02n65d.pdf pdf_icon

CEP02N7G

CEP02N65D/CEB02N65D CEF02N65D PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65D 650V 6.9 2A 10V CEB02N65D 650V 6.9 2A 10V CEF02N65D 650V 6.9 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF S

 8.2. Size:391K  cet
 cep02n9 ceb02n9 cef02n9.pdf pdf_icon

CEP02N7G

CEP02N9/CEB02N9 CEF02N9 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N9 900V 6.8 2.6A 10V CEB02N9 900V 6.8 2.6A 10V CEF02N9 900V 6.8 2.6A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES

 8.3. Size:391K  cet
 cep02n65a ceb02n65a cef02n65a.pdf pdf_icon

CEP02N7G

CEP02N65A/CEB02N65A CEF02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65A 650V 10.5 1.3A 10V CEB02N65A 650V 10.5 1.3A 10V CEF02N65A 650V 10.5 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES C

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... CEF07N65A, CEF07N7, CEP01N65, CEP01N6G, CEP02N65A, CEP02N65G, CEP02N6A, CEP02N6G, K3569, CEP02N9, CEP03N8, CEP04N6, CEP04N65, CEP04N7G, CEP05N65, CEP06N7, CEP07N65