CEB15A03 Specs and Replacement
Type Designator: CEB15A03
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 190 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 1570 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO263
CEB15A03 substitution
- MOSFET ⓘ Cross-Reference Search
CEB15A03 datasheet
cep15a03 ceb15a03.pdf
CEP15A03/CEB15A03 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 190A, RDS(ON) = 4.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless other... See More ⇒
cef15p15 cep15p15 ceb15p15.pdf
CEP15P15/CEB15P15 CEF15P15 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP15P15 -150V 0.24 -15A -10V CEB15P15 -150V 0.24 -15A -10V CEF15P15 -150V 0.24 -15A d -10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP... See More ⇒
Detailed specifications: CEP13N5A, CEB08N8, CEF08N8, CEP08N8, CEB20A03, CEP20A03, CEB14G04, CEP14G04, BS170, CEP15A03, CEB14A04, CEP14A04, CEB140N10, CEP140N10, CEB16N10L, CEP16N10L, CEB16N10
Keywords - CEB15A03 MOSFET specs
CEB15A03 cross reference
CEB15A03 equivalent finder
CEB15A03 pdf lookup
CEB15A03 substitution
CEB15A03 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
