All MOSFET. CEB15A03 Datasheet

 

CEB15A03 Datasheet and Replacement


   Type Designator: CEB15A03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 190 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 1570 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO263
 

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CEB15A03 Datasheet (PDF)

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CEB15A03

CEP15A03/CEB15A03N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 190A, RDS(ON) = 4.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless other

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CEB15A03

CEP15P15/CEB15P15CEF15P15PRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP15P15 -150V 0.24 -15A -10VCEB15P15 -150V 0.24 -15A -10VCEF15P15 -150V 0.24 -15A d -10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP

Datasheet: CEP13N5A , CEB08N8 , CEF08N8 , CEP08N8 , CEB20A03 , CEP20A03 , CEB14G04 , CEP14G04 , 18N50 , CEP15A03 , CEB14A04 , CEP14A04 , CEB140N10 , CEP140N10 , CEB16N10L , CEP16N10L , CEB16N10 .

History: 2SJ179 | NCE80H12D | IRF3805SPBF | STB21NM50N | FQD5N40TF | SHD220212 | OSG65R200KF

Keywords - CEB15A03 MOSFET datasheet

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