All MOSFET. CEP140N10 Datasheet

 

CEP140N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEP140N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 208 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 137 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 227 nC

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 605 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm

Package: TO220

CEP140N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEP140N10 Datasheet (PDF)

1.1. cep140n10 ceb140n10.pdf Size:419K _cet

CEP140N10
CEP140N10

CEP140N10/CEB140N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 137A, RDS(ON) = 7.5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise

5.1. cep14n5 ceb14n5 cef14n5.pdf Size:435K _cet

CEP140N10
CEP140N10

CEP14N5/CEB14N5 CEF14N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP14N5 500V 0.38Ω 14A 10V CEB14N5 500V 0.38Ω 14A 10V CEF14N5 500V 0.38Ω 14A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SER

5.2. cef14p20 cep14p20 ceb14p20.pdf Size:385K _cet

CEP140N10
CEP140N10

CEP14P20/CEB14P20 CEF14P20 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP14P20 -200V 0.36Ω -13.5A -10V CEB14P20 -200V 0.36Ω -13.5A -10V CEF14P20 -200V 0.36Ω -13.5A d -10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIE

 5.3. cep14a04 ceb14a04.pdf Size:397K _cet

CEP140N10
CEP140N10

CEP14A04/CEB14A04 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 180A, RDS(ON) = 5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise note

5.4. cep14g04 ceb14g04.pdf Size:421K _cet

CEP140N10
CEP140N10

CEP14G04/CEB14G04 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 140A, RDS(ON) = 3.6mΩ @VGS = 10V. RDS(ON) = 6.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS

Datasheet: CEP20A03 , CEB14G04 , CEP14G04 , CEB15A03 , CEP15A03 , CEB14A04 , CEP14A04 , CEB140N10 , IRFP250N , CEB16N10L , CEP16N10L , CEB16N10 , CEP16N10 , CEB13N10L , CEP13N10L , CEB13N10 , CEP13N10 .

 

 
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