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CEP140N10 Spec and Replacement


   Type Designator: CEP140N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 137 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 605 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO220

 CEP140N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEP140N10 Specs

 ..1. Size:383K  cet
 cep140n10 ceb140n10.pdf pdf_icon

CEP140N10

CEP140N10/CEB140N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 137A, RDS(ON) = 7.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise... See More ⇒

 9.1. Size:397K  cet
 cep14a04 ceb14a04.pdf pdf_icon

CEP140N10

CEP14A04/CEB14A04 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 180A, RDS(ON) = 5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise note... See More ⇒

 9.2. Size:421K  cet
 cep14g04 ceb14g04.pdf pdf_icon

CEP140N10

CEP14G04/CEB14G04 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 140A, RDS(ON) = 3.6m @VGS = 10V. RDS(ON) = 6.5m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS... See More ⇒

 9.3. Size:385K  cet
 cef14p20 cep14p20 ceb14p20.pdf pdf_icon

CEP140N10

CEP14P20/CEB14P20 CEF14P20 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP14P20 -200V 0.36 -13.5A -10V CEB14P20 -200V 0.36 -13.5A -10V CEF14P20 -200V 0.36 -13.5A d -10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIE... See More ⇒

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Detailed specifications: CEP20A03 , CEB14G04 , CEP14G04 , CEB15A03 , CEP15A03 , CEB14A04 , CEP14A04 , CEB140N10 , 10N65 , CEB16N10L , CEP16N10L , CEB16N10 , CEP16N10 , CEB13N10L , CEP13N10L , CEB13N10 , CEP13N10 .

History: IPP110N20NA | MRF177M

Keywords - CEP140N10 MOSFET specs

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