CEP140N10 - аналоги, даташиты, параметры транзистора

CEP140N10 Datasheet (PDF)

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cep140n10 ceb140n10.pdf pdf_icon

CEP140N10/CEB140N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 137A, RDS(ON) = 7.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise

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cep14a04 ceb14a04.pdf pdf_icon

CEP14A04/CEB14A04 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 180A, RDS(ON) = 5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise note

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cep14g04 ceb14g04.pdf pdf_icon

CEP14G04/CEB14G04 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 140A, RDS(ON) = 3.6m @VGS = 10V. RDS(ON) = 6.5m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS

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cef14p20 cep14p20 ceb14p20.pdf pdf_icon

CEP14P20/CEB14P20 CEF14P20 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP14P20 -200V 0.36 -13.5A -10V CEB14P20 -200V 0.36 -13.5A -10V CEF14P20 -200V 0.36 -13.5A d -10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIE