Справочник MOSFET. CEP140N10

 

CEP140N10 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: CEP140N10

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 208 W

Предельно допустимое напряжение сток-исток (Uds): 100 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 137 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 227 nC

Время нарастания (tr): 20 ns

Выходная емкость (Cd): 605 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0075 Ohm

Тип корпуса: TO220

Аналог (замена) для CEP140N10

 

 

CEP140N10 Datasheet (PDF)

1.1. cep140n10 ceb140n10.pdf Size:419K _cet

CEP140N10
CEP140N10

CEP140N10/CEB140N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 137A, RDS(ON) = 7.5m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise note

5.1. cep14n5 ceb14n5 cef14n5.pdf Size:435K _cet

CEP140N10
CEP140N10

CEP14N5/CEB14N5 CEF14N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP14N5 500V 0.38? 14A 10V CEB14N5 500V 0.38? 14A 10V CEF14N5 500V 0.38? 14A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO-2

5.2. cef14p20 cep14p20 ceb14p20.pdf Size:385K _cet

CEP140N10
CEP140N10

CEP14P20/CEB14P20 CEF14P20 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP14P20 -200V 0.36? -13.5A -10V CEB14P20 -200V 0.36? -13.5A -10V CEF14P20 -200V 0.36? -13.5A d -10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SE

 5.3. cep14a04 ceb14a04.pdf Size:397K _cet

CEP140N10
CEP140N10

CEP14A04/CEB14A04 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 180A, RDS(ON) = 5m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Pa

5.4. cep14g04 ceb14g04.pdf Size:421K _cet

CEP140N10
CEP140N10

CEP14G04/CEB14G04 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 140A, RDS(ON) = 3.6m? @VGS = 10V. RDS(ON) = 6.5m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc = 2

Другие MOSFET... CEP20A03 , CEB14G04 , CEP14G04 , CEB15A03 , CEP15A03 , CEB14A04 , CEP14A04 , CEB140N10 , IRFP250N , CEB16N10L , CEP16N10L , CEB16N10 , CEP16N10 , CEB13N10L , CEP13N10L , CEB13N10 , CEP13N10 .

 

 
Back to Top