CEB16N10L Specs and Replacement
Type Designator: CEB16N10L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15.2 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.8 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
Package: TO263
CEB16N10L substitution
- MOSFET ⓘ Cross-Reference Search
CEB16N10L datasheet
cep16n10l ceb16n10l.pdf
CEP16N10L/CEB16N10L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 115m @VGS = 10V. RDS(ON) = 125m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MA... See More ⇒
cep16n10 ceb16n10.pdf
CEP16N10/CEB16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 120m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted... See More ⇒
Detailed specifications: CEB14G04, CEP14G04, CEB15A03, CEP15A03, CEB14A04, CEP14A04, CEB140N10, CEP140N10, 5N60, CEP16N10L, CEB16N10, CEP16N10, CEB13N10L, CEP13N10L, CEB13N10, CEP13N10, CEB14N5
Keywords - CEB16N10L MOSFET specs
CEB16N10L cross reference
CEB16N10L equivalent finder
CEB16N10L pdf lookup
CEB16N10L substitution
CEB16N10L replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
