All MOSFET. CEB16N10L Datasheet

 

CEB16N10L Datasheet and Replacement


   Type Designator: CEB16N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15.2 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 2.8 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: TO263
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CEB16N10L Datasheet (PDF)

 ..1. Size:645K  cet
 cep16n10l ceb16n10l.pdf pdf_icon

CEB16N10L

CEP16N10L/CEB16N10LPRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 15.2A, RDS(ON) = 115m @VGS = 10V. RDS(ON) = 125m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MA

 6.1. Size:534K  cet
 cep16n10 ceb16n10.pdf pdf_icon

CEB16N10L

CEP16N10/CEB16N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 15.2A, RDS(ON) = 120m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

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History: WMM11N80M3 | FDMS9620S

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