CEP13N10 Datasheet. Specs and Replacement

Type Designator: CEP13N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12.8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO220

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CEP13N10 substitution

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CEP13N10 datasheet

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 cep13n10 ceb13n10.pdf pdf_icon

CEP13N10

CEP13N10/CEB13N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 180m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted... See More ⇒

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 cep13n10l ceb13n10l.pdf pdf_icon

CEP13N10

CEP13N10L/CEB13N10L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 175m @VGS = 10V. RDS(ON) = 185m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS... See More ⇒

 0.2. Size:302K  ncepower
 ncep13n10as.pdf pdf_icon

CEP13N10

http //www.ncepower.com NCEP13N10AS NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP13N10AS uses Super Trench II technology that is VDS =100V,ID =10A uniquely optimized to provide the most efficient high frequency RDS(ON)=12m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=15m (typical) @ VGS=4.5V losses... See More ⇒

 8.1. Size:435K  cet
 cep13n5a ceb13n5a cef13n5a.pdf pdf_icon

CEP13N10

CEP13N5A/CEB13N5A CEF13N5A PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP13N5A 500V 0.48 13A 10V CEB13N5A 500V 0.48 13A 10V CEF13N5A 500V 0.48 13A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES C... See More ⇒

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Detailed specifications: CEP140N10, CEB16N10L, CEP16N10L, CEB16N10, CEP16N10, CEB13N10L, CEP13N10L, CEB13N10, K4145, CEB14N5, CEF14N5, CEP14N5, CEB13N5, CEP13N5, CEB12N5, CEF12N5, CEF13N5

Keywords - CEP13N10 MOSFET specs

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