CEB14N5 Specs and Replacement

Type Designator: CEB14N5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 178 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 62 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO263

CEB14N5 substitution

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CEB14N5 datasheet

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 cep14n5 ceb14n5 cef14n5.pdf pdf_icon

CEB14N5

CEP14N5/CEB14N5 CEF14N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP14N5 500V 0.38 14A 10V CEB14N5 500V 0.38 14A 10V CEF14N5 500V 0.38 14A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SER... See More ⇒

 9.1. Size:397K  cet
 cep14a04 ceb14a04.pdf pdf_icon

CEB14N5

CEP14A04/CEB14A04 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 180A, RDS(ON) = 5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise note... See More ⇒

 9.2. Size:421K  cet
 cep14g04 ceb14g04.pdf pdf_icon

CEB14N5

CEP14G04/CEB14G04 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 140A, RDS(ON) = 3.6m @VGS = 10V. RDS(ON) = 6.5m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS... See More ⇒

 9.3. Size:383K  cet
 cep140n10 ceb140n10.pdf pdf_icon

CEB14N5

CEP140N10/CEB140N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 137A, RDS(ON) = 7.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise... See More ⇒

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Detailed specifications: CEB16N10L, CEP16N10L, CEB16N10, CEP16N10, CEB13N10L, CEP13N10L, CEB13N10, CEP13N10, STF13NM60N, CEF14N5, CEP14N5, CEB13N5, CEP13N5, CEB12N5, CEF12N5, CEF13N5, CEP12N5

Keywords - CEB14N5 MOSFET specs

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