All MOSFET. CEB14N5 Datasheet

 

CEB14N5 Datasheet and Replacement


   Type Designator: CEB14N5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 178 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO263
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CEB14N5 Datasheet (PDF)

 ..1. Size:435K  cet
 cep14n5 ceb14n5 cef14n5.pdf pdf_icon

CEB14N5

CEP14N5/CEB14N5CEF14N5PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP14N5 500V 0.38 14A 10VCEB14N5 500V 0.38 14A 10VCEF14N5 500V 0.38 14A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SER

 9.1. Size:397K  cet
 cep14a04 ceb14a04.pdf pdf_icon

CEB14N5

CEP14A04/CEB14A04N-Channel Enhancement Mode Field Effect TransistorFEATURES40V, 180A, RDS(ON) = 5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise note

 9.2. Size:421K  cet
 cep14g04 ceb14g04.pdf pdf_icon

CEB14N5

CEP14G04/CEB14G04N-Channel Enhancement Mode Field Effect Transistor FEATURES40V, 140A, RDS(ON) = 3.6m @VGS = 10V. RDS(ON) = 6.5m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE MAXIMUM RATINGS

 9.3. Size:383K  cet
 cep140n10 ceb140n10.pdf pdf_icon

CEB14N5

CEP140N10/CEB140N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 137A, RDS(ON) = 7.5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise

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Datasheet: CEB16N10L , CEP16N10L , CEB16N10 , CEP16N10 , CEB13N10L , CEP13N10L , CEB13N10 , CEP13N10 , AON7403 , CEF14N5 , CEP14N5 , CEB13N5 , CEP13N5 , CEB12N5 , CEF12N5 , CEF13N5 , CEP12N5 .

History: 11NM70G-TF1-T | FP11W60C3

Keywords - CEB14N5 MOSFET datasheet

 CEB14N5 cross reference
 CEB14N5 equivalent finder
 CEB14N5 lookup
 CEB14N5 substitution
 CEB14N5 replacement

 

 
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