CEF14N5 Specs and Replacement

Type Designator: CEF14N5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 62 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO220F

CEF14N5 substitution

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CEF14N5 datasheet

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 cep14n5 ceb14n5 cef14n5.pdf pdf_icon

CEF14N5

CEP14N5/CEB14N5 CEF14N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP14N5 500V 0.38 14A 10V CEB14N5 500V 0.38 14A 10V CEF14N5 500V 0.38 14A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SER... See More ⇒

 9.1. Size:385K  cet
 cef14p20 cep14p20 ceb14p20.pdf pdf_icon

CEF14N5

CEP14P20/CEB14P20 CEF14P20 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP14P20 -200V 0.36 -13.5A -10V CEB14P20 -200V 0.36 -13.5A -10V CEF14P20 -200V 0.36 -13.5A d -10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIE... See More ⇒

Detailed specifications: CEP16N10L, CEB16N10, CEP16N10, CEB13N10L, CEP13N10L, CEB13N10, CEP13N10, CEB14N5, IRFZ24N, CEP14N5, CEB13N5, CEP13N5, CEB12N5, CEF12N5, CEF13N5, CEP12N5, CEB12N6

Keywords - CEF14N5 MOSFET specs

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