All MOSFET. CEF14N5 Datasheet

 

CEF14N5 Datasheet and Replacement


   Type Designator: CEF14N5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 50 nC
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO220F
 

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CEF14N5 Datasheet (PDF)

 ..1. Size:435K  cet
 cep14n5 ceb14n5 cef14n5.pdf pdf_icon

CEF14N5

CEP14N5/CEB14N5CEF14N5PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP14N5 500V 0.38 14A 10VCEB14N5 500V 0.38 14A 10VCEF14N5 500V 0.38 14A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SER

 9.1. Size:385K  cet
 cef14p20 cep14p20 ceb14p20.pdf pdf_icon

CEF14N5

CEP14P20/CEB14P20CEF14P20PRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP14P20 -200V 0.36 -13.5A -10VCEB14P20 -200V 0.36 -13.5A -10VCEF14P20 -200V 0.36 -13.5A d -10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK20E60U | NTP095N65S3HF | AP65SL190AP

Keywords - CEF14N5 MOSFET datasheet

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