CEF12N5 Specs and Replacement
Type Designator: CEF12N5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25.6 nS
Cossⓘ - Output Capacitance: 205 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm
Package: TO220F
CEF12N5 substitution
- MOSFET ⓘ Cross-Reference Search
CEF12N5 datasheet
cep12n5 ceb12n5 cef12n5.pdf
CEP12N5/CEB12N5 CEF12N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP12N5 500V 0.54 12A 10V CEB12N5 500V 0.54 12A 10V CEF12N5 500V 0.54 12A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES ... See More ⇒
cep12n6 ceb12n6 cef12n6.pdf
CEP12N6/CEB12N6 CEF12N6 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP12N6 600V 0.65 12A 10V CEB12N6 600V 0.65 12A 10V CEF12N6 600V 0.65 12A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES ... See More ⇒
cep12n65 ceb12n65 cef12n65.pdf
CEP12N65/CEB12N65 CEF12N65 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP12N65 650V 0.73 12A 10V CEB12N65 650V 0.73 12A 10V CEF12N65 650V 0.73 12A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES C... See More ⇒
Detailed specifications: CEB13N10, CEP13N10, CEB14N5, CEF14N5, CEP14N5, CEB13N5, CEP13N5, CEB12N5, AO3400A, CEF13N5, CEP12N5, CEB12N6, CEF12N6, CEP12N6, CEP10N4, CEB10N4, CEI10N4
Keywords - CEF12N5 MOSFET specs
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